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70V631S10BCG

Description
SRAM 256Kx18 STD-PWR 3.3V DUAL-PORT RAM
Categorystorage    storage   
File Size219KB,24 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance
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70V631S10BCG Overview

SRAM 256Kx18 STD-PWR 3.3V DUAL-PORT RAM

70V631S10BCG Parametric

Parameter NameAttribute value
Brand NameIntegrated Device Technology
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Parts packaging codeCABGA
package instructionLBGA, BGA256,16X16,40
Contacts256
Manufacturer packaging codeBCG256
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Samacsys DescriptionCHIP ARRAY BGA 17.0 X 1.7.0 MM X 1.0 MM
Maximum access time10 ns
I/O typeCOMMON
JESD-30 codeS-PBGA-B256
JESD-609 codee1
length17 mm
memory density4718592 bit
Memory IC TypeDUAL-PORT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of ports2
Number of terminals256
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA256,16X16,40
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.7 mm
Maximum standby current0.015 A
Minimum standby current3.15 V
Maximum slew rate0.5 mA
Maximum supply voltage (Vsup)3.45 V
Minimum supply voltage (Vsup)3.15 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width17 mm
Base Number Matches1
LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018
HIGH-SPEED 3.3V 256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
IDT70V631S
Features
Functional Block Diagram
UB
L
LB
L
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12ns (max.)
Dual chip enables allow for depth expansion without
external logic
IDT70V631 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
128-pin TQFP package.
LVTTL-compatible, single 3.3V (±150mV) power supply for
core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 128-pin Thin Quad Flatpack, 208-ball fine
pitch Ball Grid Array, and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
UB
R
LB
R
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0L
CE
1L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
17L
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
17R
A
0R
OE
L
CE
0L
CE
1L
R/W
L
BUSY
L
SEM
L
INT
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0R
CE
1R
R/W
R
BUSY
R
M/S
SEM
R
INT
R
TDI
TDO
JTAG
TMS
TCK
TRST
5622 drw 01
NOTES:
1.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
DECEMBER 2017
DSC-5622/8
1
©2017 Integrated Device Technology, Inc.
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