Super323™
SOT323 NPN SILICON POWER
™
(SWITCHING) TRANSISTOR
ISSUE
2
-
DECEMBER 2008
FEATURES
*
500mW POWER DISSIPATION
*
I
C
CONT 1A
*
2A Peak Pulse Current
*
Excellent H
FE
Characteristics Up To 2A (pulsed)
*
Extremely Low Equivalent On Resistance;
R
CE(sat)
APPLICATIONS
*
LCD backlighting inverter circuits
*
Boost functions in DC-DC converters
ZUMT619
DEVICE TYPE
ZUMT619
COMPLEMENT
ZUMT720
PARTMARKING
T63
R
CE(sat)
160mΩ at 1A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
VALUE
50
50
5
2
1.0
200
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
Operating and Storage Temperature T
j
:T
stg
Range
°C
† Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT619
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
24
60
120
160
940
850
200
300
200
75
20
420
450
350
130
60
215
6
150
425
MHz
pF
ns
ns
MIN.
50
50
5
10
10
10
35
80
200
270
1100
1100
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
= 100µA
I
C
= 10mA*
I
E
= 100µA
V
CB
= 40V
V
EB
= 4V
V
CES
= 40V
I
C
= 100mA, I
B
= 10mA*
I
C
= 250mA, I
B
= 10mA*
I
C
= 500mA, I
B
= 10mA*
I
C
= 1A, I
B
= 50mA*
I
C
= 1A, I
B
= 50mA*
I
C
= 1A, V
CE
= 2V*
I
C
=10mA, V
CE
= 2V*
I
C
= 100mA, V
CE
=2 V*
I
C
= 500mA, V
CE
=2V*
I
C
= 1A, V
CE
= 2V*
I
C
= 1.5A, V
CE
=2 V*
I
C
= 50mA, V
CE
=10V
f= 100MHz
V
CB
= 10V, f=1MHz
V
CC
=10 V, I
C
= 1A
I
B1
=I
B2
=100mA
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
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