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HZS18NB2

Description
17.29 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
CategoryDiscrete semiconductor    diode   
File Size53KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HZS18NB2 Overview

17.29 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34

HZS18NB2 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeDO-34
package instructionMHD, 2 PIN
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW LEAKAGE, LOW ZENER IMPEDANCE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance30 Ω
JEDEC-95 codeDO-34
JESD-30 codeO-XALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Certification statusNot Qualified
Nominal reference voltage17.29 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance2.23%
Working test current5 mA
HZS-N Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0185-0100Z
(Previous: ADE-208-124)
Rev.1.00
Mar.11.2004
Features
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc.
Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS-N Series
Mark
Type No.
Package Code
MHD
Pin Arrangement
1
Type No.
Cathode band
1. Cathode
2. Anode
Rev.1.00, Mar.11.2004, page 1 of 6
2
7.5
B
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