A Product Line of
Diodes Incorporated
Green
ZX5T955G
140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BV
CEO
> -140V
I
C
= -4A High Continuous Collector Current
I
CM
= -10A Peak Pulse Current
Low Saturation Voltage V
CE(sat)
< -120mV @ I
C
= -1A
R
SAT
= 92mΩ for a Low Equivalent On-Resistance
h
FE
Specified up to -10A for a High Gain Hold-Up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Application
Motor Driving
Line Switching
High Side Switches
Subscriber Line Interface Cards (SLIC)
SOT223
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZX5T955GTA
ZX5T955GTC
Notes:
Marking
X5T955
X5T955
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
X5T
955
X5T 955 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
ZX5T955G
Da
tasheet Number: DS33426 Rev. 4 - 2
1 of 7
www.diodes.com
YWW
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T955G
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-180
-140
-7
-4
-10
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
P
D
Value
3.0
2.0
1.6
1.2
41.7
62.5
78.1
104
10.5
-55 to +150
Unit
W
Thermal Resistance, Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
R
JA
R
JL
T
J,
T
STG
°C/W
°C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
8,000
400
Unit
V
V
JEDEC Class
3B
C
5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 5, except the device is mounted on minimum recommended pad layout.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZX5T955G
Da
tasheet Number: DS33426 Rev. 4 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T955G
Thermal Characteristics and Derating Information
Limit
Max Power Dissipation (W)
-I
C
Collector Current (A)
10
V
CE(sat)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25mmX25mm
single sided 1 oz Cu
52mmX52mm
single sided 2 oz Cu
1
DC
1s
100ms
10ms
Single Pulse. T
amb
=25°C
52mmX52mm
single sided 2oz Cu
1ms
100µs
100m
10m
100m
1
10
100
20
40
60
80
100 120 140 160
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
Single Pulse. T
amb
=25°C
Thermal Resistance (°C/W)
40
30
Max Power Dissipation (W)
52mmX52mm
single sided 2 oz Cu
100
52mmX52mm
single sided 2oz Cu
D=0.5
20
D=0.2
Single Pulse
D=0.05
D=0.1
10
10
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZX5T955G
Da
tasheet Number: DS33426 Rev. 4 - 2
3 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T955G
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R
≤
1kΩ
I
EBO
h
FE
Min
-180
-180
-140
-7
-
-
Typ.
-200
-200
-160
-8.3
< -1
-
Max
-
-
-
-
-20
-500
-20
-500
-10
-
300
-
-
-60
-80
-120
-360
-1040
-930
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
nA
nA
-
-
< -1
-
DC Current Transfer Static Ratio (Note 11)
-
100
100
45
-
-
-
-
-
Collector-Emitter Saturation Voltage (Note 11)
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
t
ON
t
OFF
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Transitional Frequency (Note 11)
Output Capacitance
Switching Time
Note:
-
-
-
-
-
-
< -1
225
200
100
5
-40
-55
-85
-275
-940
-830
120
33
42
636
-
mV
mV
mV
MHz
pF
ns
Test Condition
I
C
= -100µA
I
C
= -1µA, R
B
≤
1kΩ
I
C
= -1mA
I
E
= -100µA
V
CB
= -150V
V
CB
= -150V, T
A
= +100°C
V
CB
= -150V
V
CB
= -150V, T
A
= +100°C
V
EB
= -6V
I
C
= -10mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -3A, V
CE
= -5V
I
C
= -10A, V
CE
= -5V
I
C
= -100mA, I
B
= -5mA
I
C
= -0.5A, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
I
C
= -3A, I
B
= -300mA
I
C
= -3A, I
B
= -300mA
I
C
= -3A, V
CE
= -5V
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
V
CB
= -10V, f = 1MHz
V
CC
= -50V, I
C
= -1A,
I
B1
= -I
B2
= -100mA
11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
ZX5T955G
Da
tasheet Number: DS33426 Rev. 4 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZX5T955G
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
I
C
/I
B
=50
2.0
I
C
/I
B
=10
1.5
- V
CE(SAT)
(V)
100m
- V
CE(SAT)
(V)
I
C
/I
B
=20
1.0
100°C
25°C
0.5
-55°C
I
C
/I
B
=10
10m
1m
10m
100m
1
0.0
100m
1
- I
C
Collector Current (A)
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.4
100°C
V
CE
=5V
250
V
CE(SAT)
v I
C
Typical Gain (h
FE
)
1.2
0.8
0.6
0.4
0.2
0.0
1m
25°C
- V
BE(SAT)
(V)
1.0
-55°C
10m
100m
1
225
200
175
150
125
100
75
50
25
0
10
1.2
1.0
I
C
/I
B
=10
Normalised Gain
0.8
-55°C
25°C
0.6
100°C
0.4
1m
10m
100m
1
- I
C
Collector Current (A)
- I
C
Collector Current (A)
h
FE
v I
C
1.4
1.2
V
CE
=5V
V
BE(SAT)
v I
C
- V
BE(ON)
(V)
1.0
25°C
-55°C
0.8
0.6
0.4
1m
10m
100m
100°C
1
- I
C
Collector Current (A)
V
BE(ON)
v I
C
ZX5T955G
Da
tasheet Number: DS33426 Rev. 4 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
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