BSC098N10NS5
MOSFET
OptiMOS
TM
5Power-Transistor,100V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
8
7
SuperSO8
5
6
5
6
7
8
1
2
3
4
4
3
2
1
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
G
(0V..10V)
Value
100
9.8
60
30
22
Unit
V
mΩ
A
nC
nC
S1
S2
S3
G4
8D
7D
6D
5D
Type/OrderingCode
BSC098N10NS5
Package
PG-TDSON-8
Marking
098N10NS
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2016-09-23
OptiMOS
TM
5Power-Transistor,100V
BSC098N10NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.2.1,2016-09-23
OptiMOS
TM
5Power-Transistor,100V
BSC098N10NS5
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-20
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
Max.
60
38
11
240
39
20
69
2.5
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=10V,T
C
=25°C,R
thJA
=50K/W
1)
T
C
=25°C
I
D
=50A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
thJA
=50K/W
2)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Continuous drain current
Pulsed drain current
2)
Avalanche energy, single pulse
3)
Gate source voltage
Power dissipation
Operating and storage temperature
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
mJ
V
W
°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm
2
cooling area
1)
Symbol
R
thJC
R
thJC
R
thJA
Values
Min.
-
-
-
Typ.
1.1
-
-
Max.
1.8
20
50
Unit
K/W
K/W
K/W
Note/TestCondition
-
-
-
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
1)
Final Data Sheet
3
Rev.2.1,2016-09-23
OptiMOS
TM
5Power-Transistor,100V
BSC098N10NS5
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
1)
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
100
2.2
-
-
-
-
-
-
28
Typ.
-
3.0
0.1
10
10
8.2
10.2
1.2
57
Max.
-
3.8
1
100
100
9.8
14.0
1.8
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=36µA
V
DS
=100V,V
GS
=0V,T
j
=25°C
V
DS
=100V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=30A
V
GS
=6V,I
D
=15A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=30A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
1600
250
12
10
5
17
4
Max.
2100
320
21
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=50V,f=1MHz
V
GS
=0V,V
DS
=50V,f=1MHz
V
GS
=0V,V
DS
=50V,f=1MHz
V
DD
=50V,V
GS
=10V,I
D
=30A,
R
G,ext
=3Ω
V
DD
=50V,V
GS
=10V,I
D
=30A,
R
G,ext
=3Ω
V
DD
=50V,V
GS
=10V,I
D
=30A,
R
G,ext
=3Ω
V
DD
=50V,V
GS
=10V,I
D
=30A,
R
G,ext
=3Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
1)
Switching charge
Gate charge total
1)
Gate plateau voltage
Gate charge total, sync. FET
Output charge
1)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
Typ.
7.4
4.4
4.7
7.8
22
4.8
19
30
Max.
-
-
7.1
-
28
-
-
40
Unit
nC
nC
nC
nC
nC
V
nC
nC
Note/TestCondition
V
DD
=50V,I
D
=30A,V
GS
=0to10V
V
DD
=50V,I
D
=30A,V
GS
=0to10V
V
DD
=50V,I
D
=30A,V
GS
=0to10V
V
DD
=50V,I
D
=30A,V
GS
=0to10V
V
DD
=50V,I
D
=30A,V
GS
=0to10V
V
DD
=50V,I
D
=30A,V
GS
=0to10V
V
DS
=0.1V,V
GS
=0to10V
V
DD
=50V,V
GS
=0V
1)
2)
Defined by design. Not subject to production test.
SeeGatechargewaveformsforparameterdefinition.
Final Data Sheet
4
Rev.2.1,2016-09-23
OptiMOS
TM
5Power-Transistor,100V
BSC098N10NS5
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
1)
Reverse recovery charge
1)
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.9
49
73
Max.
63
240
1.1
99
146
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=30A,T
j
=25°C
V
R
=50V,I
F
=30A,di
F
/dt=100A/µs
V
R
=50V,I
F
=30A,di
F
/dt=100A/µs
1)
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.1,2016-09-23
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