STD65NF06
STP65NF06
N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220
STripFET™ II Power MOSFET
General features
Type
STD65NF06
STP65NF06
■
■
V
DSS
60V
60V
R
DS(on)
<14mΩ
<14mΩ
I
D
60A
60A
3
1
1
2
3
Standard level gate drive
100% avalanche tested
DPAK
TO-220
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”™
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STD65NF06
STP65NF06
Marking
D65NF06
P65NF06
Package
DPAK
TO-220
Packaging
Tape & reel
Tube
July 2006
Rev 1
1/14
www.st.com
14
Contents
STD65NF06 - STP65NF06
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STD65NF06 - STP65NF06
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
GS
I
D
I
D
I
DM(1)
P
tot
dv/dt
(2)
E
AS (3)
T
stg
T
j
2.
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating Factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
-55 to 175
Max. operating junction temperature
°C
Value
60
± 20
60
42
240
110
0.73
10
390
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
1. Pulse width limited by safe operating area.
I
SD
≤
60A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
3. Starting Tj = 25 °C, I
D
= 30A, V
DD
= 40V
Table 2.
Symbol
Thermal data
Parameter
TO-220
1.36
62.5
--
300
--
50
--
DPAK
Unit
°C/W
°C/W
°C/W
°C/W
Rthj-case Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Rthj-pcb
(1)
Thermal resistance junction-pcb max
T
l
Maximum lead temperature for soldering
purpose (for 10sec. 1.6mm from case)
1. When mounted on FR-4 of 1 inch², 2 oz Cu
3/14
Electrical characteristics
STD65NF06 - STP65NF06
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
=0
V
DS
= Max rating
V
DS
= Max rating,@125°C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 30A
2
11.5
Min.
60
1
10
±100
4
14
Typ.
Max.
Unit
V
µA
µA
nA
V
mΩ
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 25V
,
I
D
= 30A
Min.
Typ.
50
1700
400
135
15
60
40
16
54
10
20
75
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
= 25V, f = 1MHz,
V
GS
= 0
V
DD
= 30V, I
D
= 30A
R
G
= 4.7Ω V
GS
= 10V
(see
Figure 12)
V
DD
= 30V, I
D
= 60A,
V
GS
= 10V, R
G
= 4.7Ω
(see
Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/14
STD65NF06 - STP65NF06
Electrical characteristics
Table 5.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 60A, V
GS
= 0
70
150
4.4
Test conditions
Min.
Typ.
Max.
60
240
1.5
Unit
A
A
V
ns
nC
A
V
SD (2)
t
rr
Q
rr
I
RRM
Reverse recovery time
I
SD
= 60A, di/dt = 100A/µs,
Reverse recovery charge V
DD
= 25V, T
j
= 150°C
Reverse recovery current (see
Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/14
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