ZTX655 datasheet, PDF - EEWORLD Datasheet

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ZTX655: DescriptionBipolar Transistors - BJT NPN Super E-Line; Categorysemiconductor Discrete semiconductor; File Size60KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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ZTX655 Overview

Bipolar Transistors - BJT NPN Super E-Line

ZTX655 Parametric

Parameter Name	Attribute value
Product Category	Bipolar Transistors - BJT
Manufacturer	Diodes
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	150 V
Collector- Base Voltage VCBO	150 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	0.5 V
Maximum DC Collector Current	1 A
Gain Bandwidth Product fT	30 MHz
Maximum Operating Temperature	+ 150 C
Continuous Collector Current	1 A
DC Collector/Base Gain hfe Min	50 at 10 mA at 5 V, 50 at 500 mA at 5 V, 20 at 1 A at 5 V
DC Current Gain hFE Max	50 at 10 mA at 5 V
Height	4.01 mm
Length	4.77 mm
Minimum Operating Temperature	- 55 C
Packaging	Bulk
Pd - Power Dissipation	1 W
Factory Pack Quantity	4000
Width	2.41 mm
Unit Weight	0.016000 oz

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NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 2 JULY 94

FEATURES

* 150 Volt V

CEO

* 1 Amp continuous current

* Low saturation voltage

* P

tot

= 1 Watt

ZTX654

ZTX655

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX654

125

5

2

1

E-Line

TO92 Compatible

ZTX655

150

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

C

obo

50

20

30

20

3-225

ZTX654

ZTX655

MIN.

125

5

100

0.5

1.1

1.0

50

20

30

20

MHz

pF

MAX. MIN.

150

5

100

0.5

1.1

1.0

MAX.

UNIT

V

nA

V

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=10mA, I

B

=0*

I

E

=100

µ

A, I

C

=0

V

CB

=100V, I

E

=0

V

CB

=125V, I

E

=0

V

EB

=3V, I

C

=0

I

C

=500mA, I

B

=50mA*

I

C

=1A, I

B

=200mA*

I

C

=500mA, I

B

=50mA*

I

C

=500mA, V

CE

=5V*

I

C

=10mA, V

CE

=5V

I

C

=500mA, V

CE

=5V*

I

C

=1A, V

CE

=5V*

I

C

=10mA, V

CE

=20V

f=20MHz

V

CB

=20V, f=1MHz

ZTX655 Related Products

	ZTX655	ZTX654
Description	Bipolar Transistors - BJT NPN Super E-Line	Bipolar Transistors - Pre-Biased
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - Pre-Biased
Manufacturer	Diodes	Diodes
RoHS	Details	No
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3
Transistor Polarity	NPN	NPN
Configuration	Single	Single
Collector- Emitter Voltage VCEO Max	150 V	125 V
Collector- Base Voltage VCBO	150 V	125 V
Maximum Operating Temperature	+ 150 C	+ 150 C
Continuous Collector Current	1 A	1 A
DC Collector/Base Gain hfe Min	50 at 10 mA at 5 V, 50 at 500 mA at 5 V, 20 at 1 A at 5 V	50
Height	4.01 mm	4.01 mm
Length	4.77 mm	4.77 mm
Minimum Operating Temperature	- 55 C	- 55 C
Pd - Power Dissipation	1 W	1 W
Width	2.41 mm	2.41 mm
Unit Weight	0.016000 oz	0.016000 oz

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