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MAX2602ESA-

Description
Board Mount Motion u0026 Position Sensors
Categorysemiconductor    Discrete semiconductor   
File Size81KB,6 Pages
ManufacturerMaxim
Websitehttps://www.maximintegrated.com/en.html
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MAX2602ESA- Overview

Board Mount Motion u0026 Position Sensors

MAX2602ESA- Parametric

Parameter NameAttribute value
Product CategoryRF Bipolar Transistors
ManufacturerMaxim
RoHSDetails
Transistor TypeBipolar Power
TechnologySi
Transistor PolarityNPN
DC Collector/Base Gain hfe Min100
Collector- Emitter Voltage VCEO Max17 V
Emitter- Base Voltage VEBO2.3 V
Continuous Collector Current200 mA
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 85 C
ConfigurationSingle
Mounting StyleSMD/SMT
Package / CaseSOIC-8
PackagingTube
Collector- Base Voltage VCBO15 V
DC Current Gain hFE Max100 at 250 mA at 3 V
Gain Bandwidth Product fT1000 MHz
Height1.58 mm
Length4.98 mm
Maximum DC Collector Current1.2 A
Operating Frequency900 MHz
Operating Temperature Range- 40 C to + 85 C
Pd - Power Dissipation6.4 W
Factory Pack Quantity100
TypeRF Bipolar Power
Width3.99 mm
Unit Weight0.019048 oz
19-1185; Rev 3; 9/08
KIT
ATION
EVALU
E
BL
AVAILA
3.6V, 1W RF Power Transistors
for 900MHz Applications
____________________________Features
Low Voltage: Operates from 1 Li-Ion or
3 NiCd/NiMH Batteries
DC-to-Microwave Operating Range
1W Output Power at 900MHz
On-Chip Diode for Accurate Biasing (MAX2602)
Low-Cost Silicon Bipolar Technology
Does Not Require Negative Bias or Supply Switch
High Efficiency: 58%
General Description
The MAX2601/MAX2602 are RF power transistors opti-
mized for use in portable cellular and wireless equipment
that operates from three NiCd/NiMH cells or one Li-Ion
cell. These transistors deliver 1W of RF power from a
3.6V supply with efficiency of 58% when biased for con-
stant-envelope applications (e.g., FM or FSK). For NADC
(IS-54) operation, they deliver 29dBm with -28dBc ACPR
from a 4.8V supply.
The MAX2601 is a high-performance silicon bipolar RF
power transistor. The MAX2602 includes a high-
performance silicon bipolar RF power transistor, and a
biasing diode that matches the thermal and process
characteristics of the power transistor. This diode is
used to create a bias network that accurately controls
the power transistor’s collector current as the tempera-
ture changes.
The MAX2601/MAX2602 can be used as the final stage
in a discrete or module power amplifier. Silicon bipolar
technology eliminates the need for voltage inverters
and sequencing circuitry, as required by GaAsFET
power amplifiers. Furthermore, a drain switch is not
required to turn off the MAX2601/MAX2602. This
increases operating time in two ways: it allows lower
system end-of-life battery voltage, and it eliminates the
wasted power from a drain-switch device.
The MAX2601/MAX2602 are available in thermally
enhanced, 8-pin SO packages, which are screened to
the extended temperature range (-40°C to +85°C).
MAX2601/MAX2602
Ordering Information
PART
MAX2601ESA
MAX2602ESA
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
8 SOIC
8 SOIC
________________________Applications
Narrow-Band PCS (NPCS)
915MHz ISM Transmitters
Microcellular GSM (Power Class 5)
AMPS Cellular Phones
Digital Cellular Phones
Two-Way Paging
CDPD Modems
Land Mobile Radios
C
E
E
B
1
2
3
4
8
7
6
5
Pin Configurations
TOP VIEW
C
E
E
B
C
E
BIAS
B
1
2
3
4
8
7
6
5
C
E
E
B
MAX2601
PSOPII
MAX2602
PSOPII
Typical Application Circuit appears at end of data sheet.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
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