BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
●
●
●
●
●
Designed for Complementary Use with the
BD743 Series
90 W at 25°C Case Temperature
15 A Continuous Collector Current
20 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD744
Collector-base voltage (I
E
= 0)
BD744A
BD744B
BD744C
BD744
Collector-emitter voltage (I
B
= 0)
BD744A
BD744B
BD744C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
-50
-70
-90
-110
-45
-60
-80
-100
-5
-15
-20
-5
90
2
90
-65 to +150
-65 to +150
-65 to +150
260
V
A
A
A
W
W
mJ
°C
°C
°C
°C
V
V
UNIT
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD744
V
(BR)CEO
I
C
= -30 mA
I
B
= 0
(see Note 5)
BD744A
BD744B
BD744C
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
I
CBO
Collector cut-off
current
V
CE
= -110 V
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
I
CEO
I
EBO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= -30 V
V
CE
= -60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CE
=
-5 V
-4 V
-4 V
-4 V
-0.5 A
-5 A
-4 V
-4 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= -1 A
I
C
= -5 A
I
C
= -15 A
I
C
= -5 A
I
C
= -15 A
I
C
= -5 A
I
C
= -15 A
I
C
= -1 A
I
C
= -1 A
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
25
5
(see Notes 5 and 6)
40
20
5
-1
-3
-1
-3
V
V
150
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
BD744
BD744A
BD744B
BD744C
BD744
BD744A
BD744B
BD744C
BD744/744A
BD744B/744C
MIN
-45
-60
-80
-100
-0.1
-0.1
-0.1
-0.1
-5
-5
-5
-5
-0.1
-0.1
-0.5
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= -10 V
V
CE
= -10 V
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.4
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
d
t
r
t
s
t
f
†
TEST CONDITIONS
I
C
= -5 A
V
BE(off)
= 4.2 V
I
B(on)
= -0.5 A
R
L
= 6
Ω
†
MIN
I
B(off)
= 0.5 A
t
p
= 20 µs, dc
≤
2%
TYP
20
120
600
300
MAX
UNIT
ns
ns
ns
ns
Delay time
Rise time
Storage time
Fall time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= -4 V
t
p
= 300 µs, duty cycle < 2%
TCS638AA
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-10
I
C
= 10
I
B
t
p
= 300µs, duty cycle < 2%
TCS638AB
T
C
= 125°C
T
C
= 25°C
T
C
= -55°C
h
FE
- DC Current Gain
-1·0
100
-0·1
T
C
= -55°C
T
C
= 25°C
T
C
= 125°C
-0·01
-0·1
-1·0
-10
-100
10
-0·1
-1·0
-10
-100
I
C
- Collector Current - A
I
C
- Collector Current - A
Figure 1.
Figure 2.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS638AA
I
C
- Collector Current - A
-10
t
p
= 1 ms,
d = 0.1 = 10%
t
p
= 10 ms,
d = 0.1 = 10%
t
p
= 50 ms,
d = 0.1 = 10%
DC Operation
-1·0
-0·1
BD744
BD744A
BD744B
BD744C
-0·01
-1·0
-10
-100
-1000
V
CE
- Collector-Emitter Voltage - V
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
100
P
tot
- Maximum Power Dissipation - W
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
TIS637AA
Figure 4.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
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