EM6M1
Transistors
2.5V Drive Nch+Pch MOSFET
EM6M1
Structure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
EMT6
Features
1) Nch MOSFET and Pch MOSFET are put in EMT6 package.
2) High-speed switching.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
Each lead has same dimensions
Abbreviated symbol : M01
Applications
Switching
Packaging specifications
Package
Type
EM6M1
Code
Basic ordering unit (pieces)
Taping
T2R
8000
Inner circuit
(6)
(5)
(4)
∗1
∗2
∗2
∗1
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
P
D
∗2
Tch
Tstg
Limits
Tr1 : N-ch
Tr2 : P-ch
−20
30
±
20
±12
±0.1
±0.2
±0.4
±0.4
150
120
150
−55
to
+150
Unit
V
V
A
A
mW / TOTAL
mW / ELEMENT
°C
°C
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Range of storage temperature
∗1
Pw 10µs, Duty cycle 1%
∗2
Mounted on a ceramic board
Continuous
Pulsed
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
1/6
EM6M1
Transistors
N-ch
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
0.9
0.2
0.2
Max.
±1
−
1
1.5
8
13
−
−
−
−
−
−
−
−
−
−
−
Gate-source leakage
I
GSS
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗Pulsed
R
DS (on)
∗
Y
fs
∗
C
iss
C
oss
C
rss
t
d (on)
∗
t
r
∗
t
d (off)
∗
t
f
∗
Q
g
∗
Q
gs
∗
Q
gd
∗
Unit
µA
V
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=
±20V,
V
DS
=0V
I
D
=10µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=3V, I
D
=100µA
I
D
=10mA, V
GS
=4V
I
D
=1mA, V
GS
=2.5V
V
DS
=3V, I
D
=10mA
V
DS
=5V
V
GS
=0V
f=1MHz
V
DD
5V
I
D
=10mA
V
GS
=5V
R
L
=500Ω
R
G
=10Ω
V
DD
15V, I
D
=0.1A
V
GS
=4.5V
R
L
=150Ω, R
G
=10Ω
P-ch
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Gate-source leakage
I
GSS
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗Pulsed
R
DS (on)
∗
Y
fs
∗
C
iss
C
oss
C
rss
t
d (on)
∗
t
r
∗
t
d (off)
∗
t
f
∗
Q
g
∗
Q
gs
∗
Q
gd
∗
Min.
−
−20
−
−0.7
−
−
−
0.2
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
1.0
1.1
2.0
−
50
5
5
9
6
35
45
1.2
0.2
0.2
Max.
±10
−
−1
−2.0
1.5
1.6
3.0
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=
±12V,
V
DS
=0V
I
D
=
−1mA,
V
GS
=0V
V
DS
=
−20V,
V
GS
=0V
V
DS
=
−10V,
I
D
=
−1mA
I
D
=
−0.2A,
V
GS
=
−4.5V
I
D
=
−0.2A,
V
GS
=
−4V
I
D
=
−0.2A,
V
GS
=
−2.5V
V
DS
=
−10V,
I
D
=
−0.15A
V
DS
=
−10V
V
GS
= 0V
f=1MHz
V
DD
−15
V
I
D
=
−0.15A
V
GS
=
−4.5V
R
L
= 100Ω
R
G
= 10Ω
V
DD
−15V,
I
D
=
−0.2A
V
GS
=
−4.5V
R
L
= 75Ω, R
G
= 10Ω
2/6
EM6M1
Transistors
N-ch
Electrical characteristic curve
200m
100m
50m
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on)
(Ω)
V
DS
=3V
Pulsed
50
V
GS
=4V
Pulsed
50
20
10
5
20m
10m
5m
2m
1m
0.5m
Ta=125
°C
75
°C
25
°C
−25°C
20
10
5
Ta=125
°C
75
°C
25
°C
−25°C
V
GS
=2.5V
Pulsed
Ta=125
°C
75
°C
25
°C
−25°C
2
1
0.5
0.001 0.002
2
1
0.5
0.001 0.002
0.2m
0.1m
0
1
2
3
4
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
GATE-SOURCE VOLTAGE : V
GS
(V)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (
Ι
)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (
ΙΙ
)
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
15
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on)
(Ω)
Ta=25
°C
Pulsed
0.5
V
DS
=3V
Pulsed
200m
100m
0.1
0.05
0.02
0.01
0.005
0.002
10
Ta=−25
°C
25
°C
75
°C
125
°C
SOURCE CURRENT : I
S
(A)
0.2
V
GS
=0V
Pulsed
50m
20m
10m
5m
2m
1m
0.5m
0.2m
Ta=125
°C
75
°C
25
°C
−25°C
5
I
D
=0.1A
I
D
=0.05A
0
0
5
10
15
20
0.001
0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0.1m
0
0.5
1
1.5
GATE-SOURCE VOLTAGE : V
GS
(V)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.5 Forward Transfer
Admittance vs. Drain Current
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage (
Ι
)
50
20
Ta=25
°C
f=1MH
Z
V
GS
=0V
1000
500
t
f
t
d(off)
Ta=25
°C
V
DD
=5V
V
GS
=5V
R
G
=10Ω
CAPACITANCE : C (pF)
C
iss
10
5
SWITHING TIME : t (ns)
200
100
50
20
10
5
2
0.1 0.2
C
oss
C
rss
t
r
t
d(on)
2
1
0.5
0.1
0.2
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(mA)
Fig.7
Typical Capacitance vs.
Drain-Source Voltage
Fig.8 Switching Characteristics
3/6
EM6M1
Transistors
P-ch
Electrical characteristic curve
1
Ta=125
°C
75
°C
25
°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
DRAIN CURRENT :
−I
D
(A)
0.1
Ta=125
°C
75
°C
25
°C
−25°C
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
DS
=
−10V
Pulsed
10
V
GS
=
−4.5V
Pulsed
10
Ta=125
°C
75
°C
25
°C
−25°C
1
V
GS
=
−4V
Pulsed
0.01
0.001
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
0.1
0.01
0.1
DRAIN CURRENT :
−I
D
(A)
1
0.1
0.01
0.1
DRAIN CURRENT :
−I
D
(A)
1
GATE-SOURCE VOLTAGE :
−V
GS
(V)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance
vs. Drain Current (
Ι
)
Fig.3 Static Drain-Source On-State Resistance
vs. Drain Current (
ΙΙ
)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
Ta=125
°C
75
°C
25
°C
−25°C
V
GS
=
−2.5V
Pulsed
10
Ta=25
°C
Pulsed
5
Ta=25
°C
Pulsed
4
V
GS
=
−2.5V
3
1
1
V
GS
=
−4V
V
GS
=
−4.5V
2
I
D
=
−0.2A
I
D
=
−0.1A
1
0.1
0.01
0.1
DRAIN CURRENT :
−I
D
(A)
1
0.1
0.01
0
0.1
DRAIN CURRENT :
−I
D
(A)
1
0
1
2
3
4
5
6
7
8
9
10
GATE-SOURCE VOLTAGE :
−V
GS
(V)
Fig.4 Static Drain-Source On-State Resistance
vs. Drain Current (
ΙΙΙ
)
Fig.5 Static Drain-Source On-State Resistance
vs. Drain Current (
Ι
)
Fig.6 Static Drain-Source On-State Resistance
vs. Gate-Source Voltage
100
1000
C
iss
CAPACITANCE : C
(pF)
t
f
100
t
d(off)
GATE-SOURCE VOLTAGE :
−V
GS
(V)
SWITCHING TIME : t (ns)
Ta=25
°C
V
DD
=
−15V
V
GS
=
−4.5V
R
G
=10Ω
Pulsed
4.5
Ta=25
°C
4
V
DD
=
−15V
I
D
=
−0.2A
3.5
R
G
= 10Ω
Pulsed
3
2.5
2
1.5
1
0.5
0
10
10
t
d(on)
t
r
C
oss
Ta=25
°C
f=1MHz
V
GS
=0V
C
rss
0
0.01
0.1
1
10
100
1
0.01
0.1
DRAIN CURRENT :
−I
D
(A)
1
0
0.2
0.4
0.6
0.8
1
1.2
DRAIN-SOURCE VOLTAGE :
−V
DS
(V)
TOTAL GATE CHARGE : Q
g
(nC)
Fig.7 Typical Capacitance vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
4/6
EM6M1
Transistors
1
V
GS
=0V
Pulsed
Ta=125
°C
75
°C
25
°C
−25°C
SOURCE CURRENT :
−I
S
(A)
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
SOURCE-DRAIN VOLTAGE :
−V
SD
(V)
Fig.10 Source Current vs. Source-Drain Voltage
N-ch
Measurement circuit
Pulse Width
50%
10%
10%
90%
50%
V
GS
V
GS
I
D
D.U.T.
R
L
V
DS
R
G
V
DS
10%
90%
90%
t
d(off)
t
f
t
off
V
DD
t
d(on)
t
on
t
r
Fig.9 Switching Time Test Circuit
Fig.10 Switching Time Waveforms
V
G
V
GS
I
D
R
L
V
DS
V
GS
Q
gs
Q
g
I
G(Const.)
D.U.T.
R
G
V
DD
Q
gd
Charge
Fig.11 Gate Charge Measurement Circuit
Fig.12 Gate Charge Waveform
5/6
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