SBRT4U10LP
4A TrenchSBR
TRENCH SUPER BARRIER RECTIFIER
Product Summary
V
RRM
(V)
10
I
O
(A)
4
V
F(MAX)
(V)
@ +25°
C
0.5
I
R(MAX)
(mA)
@ +25°
C
0.2
Features and Benefits
•
Patented TrenchSBR technology provides superior avalanche
capability versus Schottky diodes, ensuring more rugged and
reliable end applications
Reduced ultra-low forward voltage drop (V
F
).
Better efficiency and cooler operation
Reduced high temperature reverse leakage.
Increased reliability against thermal runaway failure in high
temperature operation
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCED INFORMATION
ADVANCED INFORMATION
•
•
ADVANCED INFORMATION
•
•
•
Description and Applications
The SBRT4U10LP provides very low V
F
and excellent reverse
Mechanical Data
•
•
Case: U-DFN2020-2 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Polarity: See Below
Weight: 6.757mg (Approximate)
leakage stability at high temperatures. It is ideal for use as bypass
diode and rectifier, freewheel diode or blocking diode in applications
•
such as:
•
•
Solar Panels
•
Blocking Diode
•
•
Bypass Diode
•
•
Boost Diode
•
Recirculating Diode
U-DFN2020-2 (Type B)
Top View
Bottom View
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
SBRT4U10LP-7
Notes:
Case
U-DFN2020-2 (Type B)
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
4U10 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 6 = June)
Bar = Cathode
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
2015
C
Mar
3
2016
D
Apr
4
2017
E
May
5
Jun
6
2018
F
Jul
7
2019
G
Aug
8
2020
H
Sep
9
Oct
O
2021
I
Nov
N
2022
J
Dec
D
March 2015
© Diodes Incorporated
SBRT4U10LP
Document number: DS37342 Rev. 4 - 2
1 of 5
www.diodes.com
SBRT4U10LP
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
V
RRM
V
RWM
V
RM
I
O
I
FSM
Value
10
4
35
Unit
V
A
A
NEW PROD
ADVANCED INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic
Typical Thermal Resistance Junction to Case (Note 5)
Typical Thermal Resistance Junction to Ambient (Note 5)
Operating Temperature Range
DC Forward Mode (Note 7)
Storage Temperature Range
T
STG
V
R
≤
80% V
RRM
V
R
≤
50% V
RRM
Symbol
R
θJC
R
θJA
T
J
Value
6
65
-55 to +150
≤
175
≤+200
-55 to +150
+
Unit
°
C/W
°
C/W
°
C
°
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Forward Voltage Drop (Note 6)
Leakage Current (Note 6)
Notes:
Symbol
V
F
I
R
Min
—
—
—
Typ
—
—
6.5
Max
0.500
200
—
Unit
V
µA
mA
Test Condition
I
F
= 4A, T
J
= +25°
C
V
R
= 10V, T
J
= +25°
C
V
R
= 10V, T
J
= +125°
C
5. Device mounted on FR4 PCB pad layout 1inch 2oz copper
6. Short duration pulse test used to minimize self-heating effect.
7. Max junction temperature guaranteed for two hours.
I
F
, INSTANTANEOUS FO RWA RD CURRENT (A)
10
T
A
=150°
C
100000
T
A
= 175°
C
1
10000
I
R
, LE AKA GE CURRENT (µA)
T
A
=175°
C
T
A
= 150°
C
T
A
= 125°
C
1000
100
10
T
A
= 25°
C
T
A
= 85°
C
0 1
.
T
A
=125°
C
0 01
.
T
A
=85°
C
0 001
.
1
0 1
0 01
0 001
0
.
.
.
0 0001
.
T
A
=25°
C
0 00001
.
0
100
200
300
400
500
600
V
F
, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 1 Typical Forward Characteristics
4
6
8
V
R
, REVERSE VOLTAGE (V)
Figure 2 Typical Reverse Characteristics
2
10
SBRT4U10LP
Document number: DS37342 Rev. 4 - 2
2 of 5
www.diodes.com
March 2015
© Diodes Incorporated
SBRT4U10LP
10000
f=1MH
z
150
C
T
, JUNCTION CAPACITANCE (pF)
T
A
, AMBI ENT TEMPERATURE (
°
C)
125
Note 5
100
1000
75
NEW PROD
ADVANCED INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
50
25
100
0
4
6
8
V
R
, REVERSE VOLTAGE (V)
Figure 3 Typical Junction Capacitance
2
10
0
0
1
2
3
4
5
6
7
8
9
V
R
, DC REVERSE VOLTAGE (V)
Figure 4 Operating Temperature Derating
10
400
P
(PK)
, P EAK TRANSIE NT P OWE R (W)
350
300
250
200
150
100
50
0
0.0001 0.001 0.01
0.1
1
10
100 1000
t
1
, PULSE DURATION TIME (s)
Figure 5 Single Pulse Maximum Power Dissipation
1
D = 0.7
Single Pulse
Rthja=173C/W
Rthja(t)= Rthja * r(t)
Tj-Ta = P * Rthja (t)
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja(t) = r(t) * Rthja
Rthja = 173C/W
Duty Cycle, D = t
1
/t
2
0.001
0.01
0.1
1
10
100
1000
Single Pulse
0.001
0.0001
t1, PULSE DURATION TIME (sec)
Figure 6 Transient Thermal Resistance
SBRT4U10LP
Document number: DS37342 Rev. 4 - 2
3 of 5
www.diodes.com
March 2015
© Diodes Incorporated
SBRT4U10LP
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
NEW PROD
ADVANCED INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SBRT4U10LP
Document number: DS37342 Rev. 4 - 2
4 of 5
www.diodes.com
enalP gnitaeS
1A
U-DFN2020-2
(Type B)
Dim Min Max
Typ
A
0.47 0.53
0.50
A1
0.00 0.05
0.02
b
1.55 1.65
1.60
D
1.95 2.05
2.00
D2
1.50 1.70
1.60
E
1.95 2.05
2.00
E2
1.22 1.42
1.32
k
0.25 BSC
L
0.23 0.33
0.28
Z
0.20 BSC
Z1
0.075 BSC
All Dimensions in mm
1Z
k
2Y
G
2D
D
b
1X
X
2E
L
A
Z
E
Y
1Y
Dimensions
G
X
X1
Y
Y1
Y2
Value
(in mm)
0.150
1.700
1.700
0.480
1.520
2.150
March 2015
© Diodes Incorporated
SBRT4U10LP
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
NEW PROD
ADVANCED INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
SBRT4U10LP
Document number: DS37342 Rev. 4 - 2
5 of 5
www.diodes.com
March 2015
© Diodes Incorporated
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