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BUK9535-100A127

Description
MOSFET RAIL PWR-MOS
Categorysemiconductor    Discrete semiconductor   
File Size202KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9535-100A127 Overview

MOSFET RAIL PWR-MOS

BUK9535-100A127 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current41 A
Rds On - Drain-Source Resistance34 mOhms
Vgs - Gate-Source Voltage10 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingTube
Fall Time108 ns
Height9.4 mm
Length10.3 mm
Pd - Power Dissipation149 W
Rise Time62 ns
Factory Pack Quantity1000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time194 ns
Typical Turn-On Delay Time10 ns
Width4.5 mm
Unit Weight0.211644 oz
TO
-22
0A
B
BUK9535-100A
N-channel TrenchMOS logic level FET
Rev. 2 — 9 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
100
41
149
V
A
W
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