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BCW33-T-R

Description
Bipolar Transistors - BJT TRANS GP TAPE-7
Categorysemiconductor    Discrete semiconductor   
File Size56KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Bipolar Transistors - BJT TRANS GP TAPE-7

BCW33-T-R Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerNXP
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max32 V
Collector- Base Voltage VCBO32 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage210 mV
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current0.1 A
DC Collector/Base Gain hfe Min420
Height1 mm
Length3 mm
Minimum Operating Temperature- 65 C
Pd - Power Dissipation250 mW
Factory Pack Quantity3000
Width1.4 mm
Unit Weight0.000282 oz
DISCRETE SEMICONDUCTORS
DATA SHEET
BCW31; BCW32; BCW33
NPN general purpose transistors
Product data sheet
Supersedes data of 2000 Jul 04
2004 Feb 06

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