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BSS306NH6327XT

Description
MOSFET 60V Nch Dual Cool Power Trench MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size220KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSS306NH6327XT Overview

MOSFET 60V Nch Dual Cool Power Trench MOSFET

BSS306NH6327XT Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current2.3 A
Rds On - Drain-Source Resistance57 mOhms
Vgs th - Gate-Source Threshold Voltage1.2 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge1.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
QualificationAEC-Q100
Channel ModeEnhancement
PackagingReel
PackagingMouseReel
PackagingCut Tape
Fall Time1.4 ns
Forward Transconductance - Min5 S
Height1.1 mm
Length2.9 mm
Pd - Power Dissipation500 mW (1/2 W)
Rise Time2.3 ns
Factory Pack Quantity3000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time8.3 ns
Typical Turn-On Delay Time4.4 ns
Width1.3 mm
Unit Weight0.000282 oz
BSS306N
OptiMOS
2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
57
93
2.3
A
V
PG-SOT23
3
1
2
Type
BSS306N
Package
SOT23
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
SWs
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=2.3 A,
R
GS
=25
Ω
I
D
=2.3 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
2.3
1.8
9
10.8
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Rev 2.3
page 1
2011-07-06
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