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BLL6H1214L-250112

Description
RF MOSFET Transistors Single 100V 42A 100mOhms
Categorysemiconductor    Discrete semiconductor   
File Size1013KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors Single 100V 42A 100mOhms

BLL6H1214L-250112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current42 A
Vds - Drain-Source Breakdown Voltage100 V
Rds On - Drain-Source Resistance169 mOhms
TechnologySi
Gain17 dB
Output Power250 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-502A-3
PackagingTube
ConfigurationSingle
Operating Frequency1.2 GHz to 1.4 GHz
Factory Pack Quantity20
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage1.8 V
BLL6H1214L-250;
BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
f
(GHz)
1.2 to 1.4
V
DS
(V)
50
P
L
(W)
250
G
p
(dB)
17
D
(%)
55
t
r
(ns)
15
t
f
(ns)
5
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an I
Dq
of 100 mA, a t
p
of 300
s
with
of 10 %:
Output power = 250 W
Power gain = 17 dB
Efficiency = 55 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
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