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BSC052N03S-G

Description
MOSFET N-Ch 30V 80A TDSON-8
Categorysemiconductor    Discrete semiconductor   
File Size99KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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MOSFET N-Ch 30V 80A TDSON-8

BSC052N03S-G Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current80 A
Rds On - Drain-Source Resistance8.2 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Quad Drain Triple Source
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
Fall Time4 ns
Height1.27 mm
Length5.9 mm
Pd - Power Dissipation2.8 W
Rise Time5 ns
Factory Pack Quantity5000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Typical Turn-On Delay Time5.9 ns
Width5.15 mm
Preliminary data
OptiMOS
â
Small-Signal-Transistor
BSO4822
Product Summary
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x
R
DS(on)
product (FOM)
150°C operating temperature
Avalanche rated
dv/dt rated
Ideal for fast switching applications
Type
BSO4822
Package
SO 8
Ordering Code
Q67042-S4095
Marking
4822
V
DS
R
DS(on)
I
D
30
10
12.7
V
mΩ
A
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
12.7
10.2
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
51
165
6
±20
2.5
-55... +150
55/150/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
I
D
=12.7 A ,
V
DD
=25V,
R
GS
=25Ω
Reverse diode dv/dt
I
S
=12.7A,
V
DS
=24V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2002-01-28
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