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SI1305DL-T1

Description
MOSFET 8V 0.92A
CategoryDiscrete semiconductor    The transistor   
File Size87KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI1305DL-T1 Overview

MOSFET 8V 0.92A

SI1305DL-T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)0.86 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.34 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Si1305DL
Vishay Siliconix
P-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
0.280 at V
GS
= - 4.5 V
-8
0.380 at V
GS
= - 2.5 V
0.530 at V
GS
= - 1.8 V
I
D
(A)
- 0.92
- 0.79
- 0.67
FEATURES
• TrenchFET
®
Power MOSFET: 1.8 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
SOT-323
SC-70 (3-LEADS)
G
1
Marking Code
3
LB
S
2
X
YY
Lot Traceability
and Date Code
Part # Code
Top
View
Ordering Information:
Si1305DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 0,28
0.34
0.22
- 55 to 150
- 0.92
- 0.74
-3
- 0.24
0.29
0.19
W
°C
5s
-8
±8
- 0.86
- 0.69
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Note:
a. Surface mounted on 1" x 1" FR4 board.
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
315
360
285
Maximum
375
430
340
°C/W
Unit
Document Number: 71076
S13-0631-Rev. G, 25-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SI1305DL-T1 Related Products

SI1305DL-T1 SI1305DL-T1-E3 SI1305DL-T1-GE3
Description MOSFET 8V 0.92A MOSFET 8V 0.92A MOSFET 1.8V P-CH (G-S) TRENCH
Is it Rohs certified? incompatible conform to conform to
Maker Vishay Vishay Vishay
Reach Compliance Code compliant compliant unknown
ECCN code EAR99 EAR99 EAR99
Configuration Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID) 0.86 A 0.86 A 0.86 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e3 e3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 0.34 W 0.34 W 0.34 W
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) MATTE TIN PURE MATTE TIN
Is it lead-free? - Lead free Lead free
Parts packaging code - SC-70 SC-70
package instruction - ROHS COMPLIANT, SC-70, 3 PIN SMALL OUTLINE, R-PDSO-G3
Contacts - 3 3
Minimum drain-source breakdown voltage - 8 V 8 V
Maximum drain current (ID) - 0.86 A 0.86 A
Maximum drain-source on-resistance - 0.28 Ω 0.28 Ω
JESD-30 code - R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Certification status - Not Qualified Not Qualified
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - 40 30
Transistor component materials - SILICON SILICON
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