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BCV62CE6327HTSA1

Description
Current u0026 Power Monitors u0026 Regulators 3-Term Adjust Currnt
CategoryDiscrete semiconductor    The transistor   
File Size527KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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Current u0026 Power Monitors u0026 Regulators 3-Term Adjust Currnt

BCV62CE6327HTSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time6 weeks
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationCURRENT MIRROR
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
BCV62
PNP Silicon Double Transistor
To be used as a current mirror
Good thermal coupling and
V
BE
matching
High current gain
Low collector-emitter saturation voltage
Pb-free (RoHS compliant) package
Qualified according AEC Q101
C1 (2)
C2 (1)
3
2
4
1
Tr.1
Tr.2
E1 (3)
E2 (4)
EHA00013
Type
BCV62A
BCV62B
BCV62C
Maximum Ratings
Parameter
Marking
3Js
3Ks
3Ls
1 = C2
1 = C2
1 = C2
Pin Configuration
2 = C1
2 = C1
2 = C1
3 = E1
3 = E1
3 = E1
4 = E2
4 = E2
4 = E2
Package
SOT143
SOT143
SOT143
Symbol
V
CEO
V
CBO
V
EBS
I
C
I
CM
I
BM
P
tot
T
j
T
stg
Value
30
30
6
100
200
200
300
150
-65 ... 150
Unit
V
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current
Base peak current (transistor T1)
Total power dissipation,
T
S
= 99 °C
Junction temperature
Storage temperature
Thermal Resistance
mA
mW
°C
Junction - soldering point
1)
1For calculation of
R
R
thJS
170
K/W
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-07-25

BCV62CE6327HTSA1 Related Products

BCV62CE6327HTSA1 BCV62AE6327HTSA1 BCV-62C-E6327 BCV-62A-E6327 BCV-62B-E6433
Description Current u0026 Power Monitors u0026 Regulators 3-Term Adjust Currnt ARM Microcontrollers - MCU Bipolar Transistors - BJT PNP Silicon Double TRANSISTOR
Configuration CURRENT MIRROR CURRENT MIRROR Single Single Dual
Packaging - - Reel Reel Cut Tape
Product Category - - Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer - - Infineon Infineon Infineon
RoHS - - Details Details Details
Mounting Style - - SMD/SMT SMD/SMT SMD/SMT
Package / Case - - SOT-143-4 SOT-143-4 SOT-143-4
Transistor Polarity - - PNP PNP PNP
Collector- Emitter Voltage VCEO Max - - 30 V 30 V 30 V
Collector- Base Voltage VCBO - - 30 V 30 V 30 V
Emitter- Base Voltage VEBO - - 6 V 6 V 6 V
Collector-Emitter Saturation Voltage - - 250 mV 250 mV 650 mV
Maximum DC Collector Current - - 100 mA 200 mA 100 mA
Gain Bandwidth Product fT - - 250 MHz 250 MHz 250 MHz
Maximum Operating Temperature - - + 150 C + 150 C + 150 C
Continuous Collector Current - - 100 mA 100 mA 0.1 A
Height - - 1 mm 1 mm 1 mm
Length - - 2.9 mm 2.9 mm 2.9 mm
Minimum Operating Temperature - - - 65 C - 65 C - 65 C
Pd - Power Dissipation - - 300 mW 300 mW 300 mW
Width - - 1.3 mm 1.3 mm 1.3 mm
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