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JANSF2N7480U3

Description
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
CategoryDiscrete semiconductor    The transistor   
File Size188KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

JANSF2N7480U3 Overview

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

JANSF2N7480U3 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)100 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)88 A
Certification statusNot Qualified
GuidelineMIL-19500/703
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD-93752C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ57034 100K Rads (Si)
IRHNJ53034 300K Rads (Si)
IRHNJ54034
600K Rads (Si)
IRHNJ58034 1000K Rads (Si)
TM
IRHNJ57034
JANSR2N7480U3
60V, N-CHANNEL
REF: MIL-PRF-19500/703
5

TECHNOLOGY
™
R
DS(on)
0.030Ω
0.030Ω
0.030Ω
0.038Ω
I
D
QPL Part Number
22A* JANSR2N7480U3
22A* JANSF2N7480U3
22A* JANSG2N7480U3
22A* JANSH2N7480U3
SMD-0.5
International Rectifier’s R5 technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
22*
21
88
75
0.6
±20
100
22
7.5
10
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
1.0 (Typical)
g
www.irf.com
1
06/16/04

JANSF2N7480U3 Related Products

JANSF2N7480U3 IRHNJ53034 IRHNJ54034 IRHNJ57034 IRHNJ58034 JANSH2N7480U3 JANSG2N7480U3 JANSR2N7480U3
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
package instruction CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code unknow unknow compliant unknow unknow compli compli unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 100 mJ 100 mJ 100 mJ 100 mJ 100 mJ 100 mJ 100 mJ 100 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Maximum drain current (ID) 22 A 22 A 22 A 22 A 22 A 22 A 22 A 22 A
Maximum drain-source on-resistance 0.03 Ω 0.03 Ω 0.03 Ω 0.03 Ω 0.03 Ω 0.03 Ω 0.03 Ω 0.03 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 88 A 88 A 88 A 88 A 88 A 88 A 88 A 88 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C - 150 °C
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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