PD-93752C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ57034 100K Rads (Si)
IRHNJ53034 300K Rads (Si)
IRHNJ54034
600K Rads (Si)
IRHNJ58034 1000K Rads (Si)
TM
IRHNJ57034
JANSR2N7480U3
60V, N-CHANNEL
REF: MIL-PRF-19500/703
5
TECHNOLOGY
R
DS(on)
0.030Ω
0.030Ω
0.030Ω
0.038Ω
I
D
QPL Part Number
22A* JANSR2N7480U3
22A* JANSF2N7480U3
22A* JANSG2N7480U3
22A* JANSH2N7480U3
SMD-0.5
International Rectifier’s R5 technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
22*
21
88
75
0.6
±20
100
22
7.5
10
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
1.0 (Typical)
g
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1
06/16/04
IRHNJ57034, JANSR2N7480U3
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
—
2.0
16
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.057
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.03
4.0
—
10
25
100
-100
45
10
15
25
100
35
30
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 21A
Ã
VDS = VGS, ID = 1.0mA
VDS > =15V, IDS = 21A
Ã
VDS=48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 22A
VDS = 30V
VDD = 30V, ID = 22A,
VGS =12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1152
535
42
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
22*
88
1.2
125
322
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 22A, VGS = 0V
Ã
Tj = 25°C, IF = 22A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
6.9
1.67
—
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Web site
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNJ57034, JANSR2N7480U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (SMD-.5)
Diode Forward Voltage
Ã
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Min
Max
Min
Max
60
2.0
—
—
—
—
—
—
—
4.0
100
-100
10
0.034
0.03
1.2
60
1.5
—
—
—
—
—
—
—
4.0
100
-100
25
0.043
0.038
1.2
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=48V, V
GS
=0V
V
GS
= 12V, I
D
= 21A
V
GS
= 12V, I
D
= 21A
V
GS
= 0V, IS = 22A
1. Part numbers IRHNJ57034 ( JANSR2N7480U3 ), IRHNJ53034 ( JANSF2N7480U3 ) and IRHNJ54034 ( JANSG2N7480U3 )
2. Part number IRHNJ58034 ( JANSH2N7480U3 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
Xe
Au
LET
MeV/(mg/cm
2
))
37.3
63
86.6
Energy
(MeV)
285
300
2068
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
36.8
60
60
60
60
40
29
46
46
35
25
15
106
35
35
27
20
14
70
60
50
40
30
20
10
0
0
-5
-10
VGS
-15
-20
VDS
Br
Xe
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ57034, JANSR2N7480U3
Pre-Irradiation
1000
I
D
, Drain-to-Source Current (A)
100
10
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1
5.0V
10
5.0V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 22A
I
D
, Drain-to-Source Current (A)
2.0
100
T
J
= 150
°
C
1.5
1.0
10
0.5
1
15
V DS = 25V
20µs PULSE WIDTH
5
7
9
11
13
15
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNJ57034, JANSR2N7480U3
2500
2000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 22A
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
C, Capacitance (pF)
15
1500
Ciss
1000
10
Coss
500
5
Crss
0
1
10
100
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
T
J
= 150
°
C
I
SD
, Reverse Drain Current (A)
10
T
J
= 25
°
C
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
1.4
10ms
100
1000
1
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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5
Embedded System
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