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BLF177112

Description
RF MOSFET Transistors RF DMOS 150W HF-VHF
Categorysemiconductor    Discrete semiconductor   
File Size304KB,20 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors RF DMOS 150W HF-VHF

BLF177112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current16 A
Vds - Drain-Source Breakdown Voltage125 V
Rds On - Drain-Source Resistance300 mOhms
TechnologySi
Gain19 dB
Output Power150 W
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-121B
PackagingTube
Channel ModeEnhancement
ConfigurationSingle
Forward Transconductance - Min6.2 S, 4.5 S
Height7.27 mm
Length24.9 mm
Operating Frequency108 MHz
Pd - Power Dissipation220 W
Factory Pack Quantity40
TypeRF Power MOSFET
Vgs - Gate-Source Voltage+/- 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Width12.86 mm
Unit Weight0.352740 oz
BLF177
HF/VHF power MOS transistor
Rev. 06 — 24 January 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
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