BAS3005B....
Medium Power AF Schottky Diode
•
Forward current: 0.5 A
•
Reverse voltage: 30 V
•
Low capacitance, low reverse current
•
For high efficiency DC/DC conversion,
fast switching, protecting and
clamping applications
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
BAS3005B-02LRH*
BAS3005B-02V
Type
BAS3005B-02LRH*
BAS3005B-02V
*Preliminary
Package
TSLP-2-17
SC79
Configuration
single, leadless
single
Marking
5B
3
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
R
V
R(RMS)
I
F
I
FRM
I
FSM
T
j
T
op
T
stg
1
Value
Unit
Diode reverse voltage
1)
RMS reverse voltage
Forward current
1)
Repetitive peak forward current
(
t
p
≤
1 ms,
D
≤
0.25)
Non-repetitive peak surge forward current
(
t
≤
10ms)
Junction temperature
Operating temperature range
Storage temperature
30
-
500
500
3.5
5
150
-55 ...125
-65 ...150
V
mA
A
Average rectified forward current (50/60Hz, sinus)
I
FAV
°C
2012-07-02
BAS3005B....
1
For
T
A
> 25°C the derating of
V
R
and
I
F
has to be considered. Please refer to the attached curves.
Thermal Resistance
Parameter
Symbol
R
thJS
Value
≤
80
Unit
Junction - soldering point
1)
1
For
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Unit
Reverse current
1)
V
R
= 5 V
V
R
= 10 V
V
R
= 30 V
I
R
µA
-
-
-
1
2
5
200
260
360
410
550
5
10
25
mV
-
-
-
-
-
250
310
410
470
620
Forward voltage
1)
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 500 mA
V
F
AC Characteristics
Diode capacitance
V
R
= 5 V,
f
= 1 MHz
1
Pulsed
C
T
-
6
10
pF
test:
t
p
= 300 µs; D = 0.01
2
2012-07-02
BAS3005B....
Forward current
I
F
=
ƒ
(
V
F
)
T
A
= Parameter
10
0
A
Permissible Reverse voltage
V
R
=
ƒ
(
T
A
)
t
p
= Parameter, Duty cycle < 0.01
Device mounted on PCB with
R
th = 160 k/W
35
V
300µs
10
-1
100ms
V
Rmax
10
-2
25
I
F
20
15
DC
10
-3
-40 °C
25 °C
85 °C
125°C
10
5
10
-4
0
0.1
0.2
0.3
0.4
V
0.6
0
0
25
50
75
100
°C
150
V
F
T
A
Forward current
I
F
=
ƒ
(
T
S
)
600
mA
500
450
400
I
F
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
°C
150
T
S
4
2012-07-02
Analog electronics
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