BC856
BC857
BC858
PNP Silicon Planar Epitaxial Transistors
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
Unit: inch (mm)
Absolute Maximum Ratings
(Ta = 25
o
C unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emmitter Voltage (+V
BE
= 1V)
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current - Peak
Emitter Current - Peak
Base Current - Peak
Total power dissipation up to
T
amb
= 60
o
C
Storge Temperature
Junction Temperature
Thermal Resistance
From junction to tab
From tab to soldering points
From soldering points to ambient
SYMBOL
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
EM
I
BM
P
tot
**
Tstg
Tj
R
th(j-t)
R
th(t-s)
R
th(s-a)
**
BC856
80
80
65
BC857
50
50
45
5
100
200
200
200
250
-55 to +150
150
60
280
90
K/W
BC858
30
30
30
UNITS
V
V
V
V
mA
mA
mA
mW
o
o
C
C
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm
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BC856
BC857
BC858
Electrical Characteristics
(at Ta=25
o
C unless otherwise specified)
DESCRIPTION
Collector Cut Off Current
Base Emitter On Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Knee Voltage
DC Current Gain
SYMBOL TEST CONDITION
I
CBO
V
BE(on)
*
V
CE(Sat)
V
BE(Sat)
***
V
CEK
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, Tj = 150 C
I
C
= 2mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
I
C
= 10mA, -I
B
= Value for which
0.7
0.85
o
MIN
TYP
MAX
15
4
0.6
0.75
0.82
0.30
0.65
UNITS
nA
uA
V
V
V
0.60
I
C
= 11mA at -V
CE
= 1V
I
C
= 2mA, V
CE
= 5V
BC856
125
125
125
220
420
4.5
V
475
800
250
475
800
h
FE
BC857/BC858
BC856A/BC857A/BC858A
BC856B/BC857B/BC858B
BC857C/BC858C
Collector Capacitance
Transition Frequency
Small Signal Current Gain
C
C
f
T
| h
fe
|
I
E
= ie = 0, V
CB
= 10V, f = 1MH
Z
I
C
= 10mA, V
CB
= 5V, f = 100MH
Z
100
125
125
500
800
10
pF
MH
Z
Noise Figure
NF
I
C
= 2mA, V
CE
= 5V, f= 1kH
Z
BC856
BC857/BC858
I
C
= 0.2mA, V
CE
= 5V
R
S
= 2k ohm, f = 1KH
Z
, B= 200H
Z
dB
*V
BE (on)
decreases by about 2mV/K with increase temperature.
***V
BE (Sat)
decreases by about 1.7mV/K with increase temperature.
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