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BUK7Y25-60EX

Description
Wireless Charging Coils WE-WPCC Transm Extnd 12.5uH 55Ohm Qi-A6
Categorysemiconductor    Discrete semiconductor   
File Size758KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Wireless Charging Coils WE-WPCC Transm Extnd 12.5uH 55Ohm Qi-A6

BUK7Y25-60EX Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK56-5
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current34 A
Rds On - Drain-Source Resistance15.7 mOhms
Vgs th - Gate-Source Threshold Voltage3 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge16.1 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationTriple Common Source
PackagingMouseReel
PackagingCut Tape
PackagingReel
Fall Time6.4 ns
Pd - Power Dissipation64 W
Rise Time6 ns
Factory Pack Quantity1500
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11.2 ns
Typical Turn-On Delay Time5.3 ns
BUK7Y25-60E
7 May 2013
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with V
GS(th)
rating of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 11
I
D
= 10 A; V
DS
= 48 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
5.6
-
nC
Min
-
-
-
Typ
-
-
-
Max
60
34
64
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
15.7
25
Dynamic characteristics
Q
GD
gate-drain charge
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