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NTR3162PT1G

Description
MOSFET PFET SOT23 20V TR
CategoryDiscrete semiconductor    The transistor   
File Size273KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTR3162PT1G Overview

MOSFET PFET SOT23 20V TR

NTR3162PT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionLEAD FREE, CASE 318-08, TO-236, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)2.2 A
Maximum drain current (ID)2.2 A
Maximum drain-source on-resistance0.07 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTR3162P
Power MOSFET
Features
-
-20 V, -
-3.6 A, Single P-
-Channel, SOT-
-23
Low R
DS(on)
at Low Gate Voltage
-
-0.3 V Low Threshold Voltage
Fast Switching Speed
This is a Pb-
-Free Device
http://onsemi.com
V
(BR)DSS
R
DS(on)
MAX
70 mΩ @ --4.5 V
--20 V
95 mΩ @ --2.5 V
120 mΩ @ --1.8 V
I
D
MAX
--2.2 A
--1.9 A
--1.7 A
Applications
Battery Management
Load Switch in PWM
Battery Protection
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain--to--Source Voltage
Gate--to--Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
5s
Power Dissipation
(Note 1)
Steady
State
t
5s
Pulsed Drain Current
t
p
= 10
ms
I
DM
T
J
,
T
stg
I
S
T
L
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
P
D
1.25
--10.7
--55 to
150
--0.6
260
A
°C
A
°C
I
D
Symbol
V
DSS
V
GS
Value
--20
±8
--2.2
--1.6
--3.6
0.48
W
A
Unit
V
V
P-
-CHANNEL MOSFET
S
G
D
MARKING DIAGRAM/
PIN ASSIGNMENT
3
1
2
SOT-
-23
CASE 318
STYLE 21
3
Drain
TRDMG
G
1
1
Gate
2
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Junction--to--Ambient -- Steady State (Note 1)
Junction--to--Ambient -- t < 10 s (Note 1)
Symbol
R
θJA
R
θJA
Max
260
100
Unit
°C/W
TRD
= Specific Device Code
M
= Date Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
1. Surface--mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
ORDERING INFORMATION
Device
NTR3162PT1G
NTR3162PT3G
Package
SOT--23
(Pb--Free)
SOT--23
(Pb--Free)
Shipping
3000 /
Tape & Reel
10000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2010
June, 2010 - Rev. 2
-
1
Publication Order Number:
NTR3162P/D
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