CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Input Bias Current
+I
B
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 100Ω
V
CM
= 0V,
+R
S
= 100Ω,
-R
S
= 10kΩ
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 10kΩ
V+ = 3V, V- = -27V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
-CMR
V+ = 27V, V- = -3V
1
2, 3
Large Signal Voltage
Gain
+A
VOL
V
OUT
= 0V and +10V,
R
L
= 2kΩ
V
OUT
= 0V and -10V,
R
L
= 2kΩ
∆V
CM
= -10V,
V+ = +5V, V- = -25V,
V
OUT
= -10V
∆V
CM
= +10V,
V+ = +25V, V- = -5V,
V
OUT
= +10V
4
5, 6
4
5, 6
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-3
-5
-200
-325
-200
-325
-30
-75
12
12
-
-
50
25
50
25
80
74
80
74
MAX
3
5
200
325
200
325
30
75
-
-
-12
-12
-
-
-
-
-
-
-
-
UNITS
mV
mV
nA
nA
nA
nA
nA
nA
V
V
V
V
kV/V
kV/V
kV/V
kV/V
dB
dB
dB
dB
PARAMETERS
Input Offset Voltage
SYMBOL
V
IO
CONDITIONS
V
CM
= 0V
-I
B
Input Offset Current
I
IO
Common Mode
Range
+CMR
-A
VOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
Spec Number
2
511007-883
Specifications HA-4741/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
4
5, 6
-V
OUT1
R
L
= 10kΩ
4
5, 6
+V
OUT2
R
L
= 2kΩ
4
5, 6
-V
OUT2
R
L
= 2kΩ
4
5, 6
Output Current
+I
OUT
V
OUT
= -10V
4
5, 6
-I
OUT
V
OUT
= +10V
4
5, 6
Quiescent Power
Supply Current
+I
CC
V
OUT
= 0V, I
OUT
=
0mA
V
OUT
= 0V, I
OUT
=
0mA
∆V
SUP
= +5V,
V+ = +10V, V- = -15V,
V+ = +20V, V- = -15V
∆V
SUP
= -5V,
V+ = +15V, V- = -10V,
V+ = +15V, V- = -20V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
12
12
-
-
10
10
-
-
5
5
-
-
-
-
-5
-7
80
80
80
80
MAX
-
-
-12
-12
-
-
-10
-10
-
-
-5
-5
5
7
-
-
-
-
-
-
UNITS
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
PARAMETERS
Output Voltage
Swing
SYMBOL
+V
OUT1
CONDITIONS
R
L
= 10kΩ
-I
CC
Power Supply
Rejection Ratio
+PSRR
-PSRR
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω , R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= +1V/V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
7
7
7
7
7
7
7
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
0.9
0.9
-
-
-
-
2.5
MAX
-
-
140
140
40
40
-
UNITS
V/µs
V/µs
ns
ns
%
%
MHz
PARAMETERS
Slew Rate
SYMBOL
+SR
-SR
CONDITIONS
V
OUT
= -5V to +5V
V
OUT
= +5V to -5V
V
OUT
= 0 to +200mV
10%
≤
T
R
≤
90%
V
OUT
= 0 to -200mV
10%
≤
T
F
≤
90%
V
OUT
= 0 to +200mV
V
OUT
= 0 to -200mV
V
OUT
= 50mV
Rise and Fall Time
T
R
T
F
Overshoot
+OS
-OS
Gain Bandwidth
Product (Small Signal)
GBWP
Spec Number
3
511007-883
Specifications HA-4741/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 5kΩ, C
LOAD
= 50pF, Unless Otherwise Specified.
LIMITS
PARAMETERS
Differential Input Resistance
Full Power
Bandwidth
Minimum Closed Loop
Stable Gain
Output Resistance
Quiescent Power
Consumption
Channel Separation
SYMBOL
R
IN
FPBW
CONDITIONS
V
CM
= 0V
V
PEAK
= 10V
R
L
= 2kΩ, C
L
= 50pF
Open Loop
V
OUT
= 0V, I
OUT
=
0mA
f = 10kHz, R
S
= 1kΩ
Referred to Input
A
V
= 100V/V,
V
IN
= 100mV
PEAK
NOTES
1
1, 2
TEMPERATURE
+25
o
C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
MIN
260
14
MAX
-
-
UNITS
kΩ
kHz
CLSG
1
1
-
V/V
Ω
mW
R
OUT
PC
1
1, 3
-
-
350
180
CS
1
-66
-
dB
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 1), 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7
1
Spec Number
4
511007-883
HA-4741/883
Die Characteristics
DIE DIMENSIONS:
87 x 75 x 19 mils
±
1 mils
2210 x 1910 x 483µm
±
25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride
Thickness: 7k
Å
±
0.7k
Å
WORST CASE CURRENT DENSITY:
1.68 x 10
5
A/cm
2
SUBSTRATE POTENTIAL (Powered Up):
V-
TRANSISTOR COUNT:
72
PROCESS:
Junction Isolated Bipolar/JFET
Metallization Mask Layout
HA-4741/883
-IN4
+IN4
V-
+IN3
-IN3
OUT4
OUT3
OUT1
OUT2
-IN1
+IN1
V+
+IN2
-IN2
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