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ZTX1056ASTZ

Description
Bipolar Transistors - BJT NPN High Current
Categorysemiconductor    Discrete semiconductor   
File Size158KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZTX1056ASTZ Overview

Bipolar Transistors - BJT NPN High Current

ZTX1056ASTZ Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max160 V
Collector- Base Voltage VCBO200 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current3 A
Gain Bandwidth Product fT120 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current3 A
DC Current Gain hFE Max275 at 10 mA at 10 V
Height4.01 mm
Length4.77 mm
Minimum Operating Temperature- 55 C
PackagingBulk
Pd - Power Dissipation1 W
Factory Pack Quantity4000
Width2.41 mm
Unit Weight0.016000 oz
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 – JANUARY 1995
FEATURES
* V
CEO
=160V
* 3 Amp Continuous Current
* 6 Amp Pulse Current
* Low Saturation Voltage
ZTX1056A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
200
160
5
6
3
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
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