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PN4275L34Z

Description
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size295KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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PN4275L34Z Overview

Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

PN4275L34Z Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)18
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)12 ns
Maximum opening time (tons)12 ns
Base Number Matches1
PN4275
Discrete POWER & Signal
Technologies
PN4275
C
BE
TO-92
NPN Switching Transistor
This device is designed for high speed saturated switching
applications at currents to 100 mA. Sourced from Process 21.
See PN2369A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15
40
4.5
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
PN4275
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation

PN4275L34Z Related Products

PN4275L34Z PN4275_D26Z
Description Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 trans SW npn 15v 200ma TO-92

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