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MRF5S9080NBR1

Description
RF MOSFET Transistors HV5 900MHZ 80W
CategoryDiscrete semiconductor    The transistor   
File Size806KB,20 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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MRF5S9080NBR1 Overview

RF MOSFET Transistors HV5 900MHZ 80W

MRF5S9080NBR1 Parametric

Parameter NameAttribute value
Brand NameFreescale
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-272
package instructionFLANGE MOUNT, R-PDFM-F4
Contacts4
Manufacturer packaging codeCASE 1484-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-272
JESD-30 codeR-PDFM-F4
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Freescale Semiconductor
Technical Data
Document Number: MRF5S9080N
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
GSM Application
Typical GSM Performance: V
DD
= 26 Volts, I
DQ
= 600 mA, P
out
= 80 Watts
CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz).
Power Gain — 18.5 dB
Drain Efficiency — 60%
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ
= 550 mA,
P
out
= 36 Watts Avg., Full Frequency Band (869 - 894 MHz or
921 - 960 MHz).
Power Gain — 19 dB
Drain Efficiency — 42%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 2.5% rms
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
200_C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
MRF5S9080NR1
MRF5S9080NBR1
869 - 960 MHz, 80 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9080NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9080NBR1
Value
- 0.5, +65
- 0.5, +15
- 65 to +150
200
Unit
Vdc
Vdc
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 80 W CW
Case Temperature 80°C, 36 W CW
Symbol
R
θJC
Value
(1,2)
0.50
0.54
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S9080NR1 MRF5S9080NBR1
1
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