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Datasheet> All Categories > Discrete semiconductor> The transistor> BC848
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BC848

Description
100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size40KB，3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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BC848 Overview

100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC848 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1

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SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
PARTMARKING DETAILS
BC846A–Z1A
BC846B–1B
BC847A–Z1E
BC847B–1F
BC847C–1GZ
BC848A–1JZ
BC850C-Z2G
BC850B–2FZ
BC850
BC860
SOT23
BC849C–2C
BC849
BC859
BC849B–2B
BC848
BC858
BC848C–Z1L
BC847
BC857
C
B
BC848B–1K
BC846
BC856
E
COMPLEMENTARY TYPES
BC846
BC848
BC850
BC847
BC849
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC846
BC847
BC848
BC849
BC850
80
80
65
6
50
50
45
30
30
30
100
200
200
200
330
-55 to +150
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
amb
=25°C
Operating and Storage
Temperature Range
BC846
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
BM
I
EM
P
tot
T
j
:T
stg
30
30
30
5
50
50
45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
BC847 BC848 BC849 BC850
15
PARAMETER
SYMBOL
Max
Collector Cut-Off Current I
CBO
Max
5
Collector-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
Typ
Max.
Typ
Max.
V
BE(sat)
Typ
Base-Emitter
Saturation Voltage
Typ
Base-Emitter Voltage
V
BE
Min
Typ
Max
Max
90
250
200
600
300
600
700
900
580
660
700
770
UNIT CONDITIONS.
nA
V
CB
= 30V
V
CB
= 30V
µ
A
T
amb
=150°C
mV I
C
=10mA,
mV I
B
=0.5mA
mV I
C
=100mA,
mV I
B
=5mA
mV I
C
=10mA*
mV
mV I
C
=10mA,
I
B
=0.5mA
mV I
C
=100mA,
I
B
=5mA
mV I
C
=2mA
mV V
CE
=5V
mV
mV
I
C
=10mA
V
CE
=5V
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.

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