DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR93AT
NPN 5 GHz wideband transistor
Product specification
Supersedes data of 1999 Nov 02
2000 Mar 09
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES
•
High power gain
•
Gold metallization ensures
excellent reliability
•
SOT416 (SC-75) package.
APPLICATIONS
Designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
The BFR93AT uses the same die as
the SOT23 version: BFR93A.
PINNING
PIN
1
2
3
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
T
s
≤
75
°C;
note 1
I
C
= 30 mA; V
CE
= 5 V
I
C
= 0; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
°C
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C;
f = 1 GHz
f = 2 GHz
F
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
noise figure
junction temperature
I
C
= 5 mA; V
CE
= 8 V; f = 1 GHz;
Γ
s
=
Γ
opt
−
−
−
−
13
8
1.5
−
open base
CONDITIONS
open emitter
MIN.
−
−
−
−
40
−
4
TYP.
−
−
−
−
90
0.6
5
base
emitter
collector
DESCRIPTION
Marking code:
R2.
fpage
BFR93AT
3
1
Top view
2
MBK090
Fig.1 SOT416.
MAX.
15
12
35
150
−
−
−
−
−
−
150
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
°C
2000 Mar 09
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
T
s
≤
75
°C;
see Fig.2
CONDITION
open emitter
open base
open collector
MIN.
−
−
−
−
−
−65
−
BFR93AT
MAX.
15
12
2
35
150
+150
150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
500
UNIT
K/W
200
Ptot
(mW)
150
MGU068
100
50
0
0
50
100
150
Ts (°C)
200
Fig.2 Power derating curve.
2000 Mar 09
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 30 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°C;
note 1;
f = 1 GHz
f = 2 GHz
F
noise figure
I
C
= 5 mA; V
CE
= 8 V;
Γ
s
=
Γ
opt
;
f = 1 GHz
f = 2 GHz
Note
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero and G
UM
−
−
1.5
2.1
−
−
13
8
MIN.
−
40
−
−
−
4
TYP.
−
90
0.7
2.3
0.6
5
BFR93AT
MAX.
50
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
−
−
−
−
dB
dB
dB
dB
S
21 2
=
10 log ---------------------------------------------------------- dB
-
(
1
–
S
11 2
) (
1
–
S
22 2
)
2000 Mar 09
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
handbook, halfpage
120
MCD087
1
Cre
(pF)
0.8
MBG203
h FE
80
0.6
0.4
40
0.2
0
0
10
20
IC (mA)
30
0
0
4
8
12
VCB (V)
16
V
CE
= 5 V.
I
C
= 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
6
fT
(GHz)
4
MBG204
2
0
1
10
IC (mA)
10
2
V
CE
= 5 V; f = 500 MHz; T
amb
= 25
°C.
Fig.5
Transition frequency as a function of
collector current; typical values.
2000 Mar 09
5
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