available in 14-lead dual in-line plastic or ceramic
package and plastic micropackage.
The HCC4007UB type is comprised of three n-chan-
nel and three p-channel enhancement type MOS
transistors. The transistor elements are accessible
through the package terminals to provide a conveni-
ent means for constructing the various typical cir-
cuits as shown in typical applications. More complex
functions are possible using multiple packages.
Numbers shown in parentheses indicate terminals
that are connected together to form the varius con-
figurations listed.
September 1988
1/14
HCC/HCF4007UB
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATING
Symbol
V
DD
*
V
i
I
I
P
tot
Parameter
Supply Voltage:
HCC
Types
HCF
Types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top = Full Package Temperature Range
Operating Temperature:
HCC
Types
HCF
Types
Storage Temperature
Value
-0.5 to +20
-0.5 to +18
-0.5 to V
DD
+ 0.5
±
10
200
100
-55 to +125
-40 to +85
-65 to +150
Unit
V
V
V
mA
mW
mW
o
o
o
T
op
T
stg
C
C
C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress ratingonly and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for external periods may affect device reliability.
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