HCC/HCF4066B
QUAD BILATERAL SWITCH FOR TRANSMISSION
OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS
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15V DIGITAL OR
±
7.5V PEAK-TO-PEAK
SWITCHING
80Ω TYPICAL ON RESISTANCE FOR 15V
OPERATION
SWITCH ON RESISTANCE MATCHED TO
WITHIN 5Ω
OVER 15V SIGNAL-INPUT
RANGE
ON RESISTANCE FLAT OVER FULL PEAK-
TO-PEAK SIGNAL RANGE
HIGH ON/OFF OUTPUT-VOLTAGE RATIO :
65dB TYP. @ f
is
= 10kHz, R
L
= 10kΩ
HIGH DEGREE OF LINEARITY : < 0.5% DIS-
TORTION TYP. @ f
is
= 1kHz, V
is
= 5 Vp-p,
V
DD
– V
SS
≥
10V, R
L
= 10kΩ
EXTREMELY LOW OFF SWITCH LEAKAGE
RESULTING IN VERY LOW OFFSET CUR-
RENT AND HIGH EFFECTIVE OFF RESIST-
ANCE ; 10pA TYP. @ V
DD
– V
SS
= 10V,
T
A
= 25°C
EXTREMELY HIGH CONTROL INPUT IMPED-
ANCE (control circuit isolated from signal cir-
cuit) : 10
12
Ω
TYP.
LOW CROSSTALK BETWEEN SWITCHES : –
50dB TYP. @ f
is
= 0.9MHz, R
L
= 1kΩ
MATCHED CONTROL-INPUT TO SIGNAL-
OUTPUT CAPACITANCE : REDUCES OUT-
PUT SIGNAL TRANSIENTS
FREQUENCY RESPONSE, SWITCH ON =
40MHz (typ.)
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
5V, 10V, AND 15V PARAMETRIC RATINGS
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N
o
. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC4066BF
HCF4066BM1
HCF4066BEY
HCF4066BC1
PIN CONNECTIONS
DESCRIPTION
The
HCC4066B
(extended temperature range) and
HCF4066B
(intermediate temperature range) are
monolithic integrated circuits, available in 14-lead
dual in-line plastic or ceramic package and plas-
tic micropackage. The
HCC/HCF4066B
is a quad
bilateral switch intended for the transmission or
multiplexing of analog or digital signals. It is pin-for-
June 1989
1/11
HCC/HCF4066B
pin compatible with
HCC/HCF4016B,
but exhibits a
much lower ON resistance. In addition, the ON re-
sistance is relatively constant over the full input-sig-
nal range. The
HCC/HCF4066B
consists of four
independent bilateral switches. A single control sig-
nal is required per switch. Both the p and the n de-
vice in a given switch are biased ON or OFF
simultaneously by the control signal. As shown in
schematic diagram, the well of the n-channel device
on each switch is either tied to the input when the
switch is ON or to V
SS
when the switch is OFF. This
SCHEMATIC DIAGRAM
1 OF 4 IDENTICAL SWITCHES AND ITS ASSOCIATED CONTROL CIRCUITRY.
configuration eliminates the variation of the switch-
transistor threshold voltage with input signal, and
thus keeps the ON resistance low over the full oper-
ating-signal range. The advantages over single-
channel switches include peak input signal voltage
swings equal to the full supply voltage, and more
constant ON impedance over the input-signal
range. For sample-and-hold applications, however,
the
HCC/HCF4016B
is recommended.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
*
V
i
I
I
P
t ot
Parameter
Supply Voltage :
HC C
Types
H C F
Types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
o p
= Full Package-temperature Range
Operating Temperature :
HCC
Types
H CF
Types
Storage Temperature
Value
– 0.5 to + 20
– 0.5 to + 18
– 0.5 to V
DD
+ 0.5
±
10
200
100
– 55 to + 125
– 40 to + 85
– 65 to + 150
Unit
V
V
V
mA
mW
mW
°C
°C
°C
T
op
T
stg
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to V
SS
pin voltage.
2/11
HCC/HCF4066B
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Parameter
Supply Voltage :
HC C
Types
H C F
Types
Input Voltage
Operating Temperature :
H CC
Types
H C F
Types
Value
3 to 18
3 to 15
0 to V
DD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, typical temperature coefficient for all V
DD
values is 0,3%/°C)
Test Conditions
Symbol
I
L
Parameter
Quiescent
Device
Current (all HCC
Types
switches
ON or all
switches
OFF)
HCF
Types
V
I
(V)
0/ 5
0/10
0/15
0/20
0/ 5
0/10
0/15
SIGNAL INPUTS
(V
is
) and Outputs (V
os
)
R
ON
On
Resistance HCC
Types
V
C
= V
DD
R
L
= 10KΩ Return
V
DD
– V
SS
to ________
2
V
is
= V
SS
to V
DD
5
10
15
5
10
15
∆ON
Resistance
between any 2
Switches,
∆R
ON
Total Harmonic
Distorsion
R
L
10kΩ, V
C
= V
DD
5
10
15
TDH
V
C
= V
DD
= 5V,
V
SS
= – 5V,
V
is
(p-p) = 5V
(sine wave centered in 0V)
R
L
= 10kΩ,
f
is
= 1kHz sine wave
V
C
= V
DD
= 5V,
V
SS
= – 5V,
V
is
(p-p) = 5V
(sine wave centured on
0V)
R
L
= 1kΩ
800
310
200
850
330
210
470
180
125
470
180
125
15
10
5
Ω
1050
400
240
1050
400
240
1300
550
320
1200
500
300
Ω
V
DD
(V)
5
10
15
20
5
10
15
T
Lo w
*
Min.
Max. Min.
0.25
0.5
1
5
1
2
4
Value
25
°C
0.01
0.01
0.01
0.02
0.01
0.01
0.01
0.25
0.5
1
5
1
2
4
T
High
*
Max.
7.5
15
30
150
7.5
15
30
µA
Unit
Typ. Max. Min.
HCF
Types
0.4
%
- 3 dB Cutoff
Frequency (switch
on)
40
MHz
* T
Lo w
= – 55°C for
HCC
device : – 40°C for
HCF
device.
* T
High
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
3/11
HCC/HCF4066B
ELECTRICAL CHARACTERISTICS
(continued)
Test Conditions
Symbol
Parameter
- 50 dB
Feedthrough
Frequency(switch
off)
- 50 dB Crosstalk
Frequency
V
DD
(V)
V
C
= V
SS
= – 5 V,
V
is
(p-p) = 5V
(sine wave centured on
0V)
R
L
= 1 kΩ
V
C
( A) = V
DD
= + 5 V
V
C
( B) = V
SS
= – 5 V
V
is
(A) = 5Vp-p,
50Ω source
R
L
= 1 kΩ
5
10
15
T
Low
*
Min.
Max. Min.
Va lu e
2 5°C
Typ.
T
High
*
Max. Min. Max.
Unit
1
MHz
8
MHz
t
pd
Propagati on Delay R
L
= 200kΩ
(signal input to
V
C
= V
DD
, V
SS
= GND,
C
L
= 5 0pF , V
is
= 1 0V
signal output)
(squa re wave centured on
5V)
t
r
, t
f
= 20ns
Input Capacitance V
DD
= + 5 V
V
C
= V
SS
= – 5 V
Output
Capacitance
Feedthrough
Input/Output
Leakage
Current
Switch OFF
V
C
= 0V
HCC
V
is
= 1 8 V ; V
os
Types = 0V
V
is
= 0 V ; V
os
= 18V
V
C
= 0V
HCF V = 1 5 V ; V
os
Types =
is
0V
V
is
= 0 V ; V
os
= 15V
18
20
10
7
8
40
20
15
ns
C
is
C
os
C
ios
pF
8
0.5
±
0.1
±10
–3
±
0.1
±
1
µA
15
±
0.3
±10
–3
±
0.3
±
1
CONTROL
(V
C
)
V
ILC
Control Input Low
I
is
< 1 0µA
Voltage
V
is
= V
SS
, V
os
= V
DD
and
V
is
= V
DD
, V
os
= V
SS
Control Input High
Voltage
5
10
15
5
10
15
I
IH
, I
IL
Input
Leakage
Current
HCC V
is
≤
V
DD
Types V
DD
– V
SS
= 1 8 V
HCF V
DD
– V
SS
= 1 5 V
Types V
CC
≤
V
DD
– V
SS
18
15
3.5
7
11
±
0.1
±
0.3
1
2
2
3.5
7
11
±10
–5
±
0.1
±10
–5
1
2
2
3.5
7
11
1
2
2
V
V
IHC
V
±
1
±
1
µA
±
0.3
* T
Lo w
= – 55°C for
HCC
device : – 40°C for
HCF
device.
* T
High
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
4/11
HCC/HCF4066B
ELECTRICAL CHARACTERISTICS
(continued)
Test Conditions
Symbol
Parameter
Crosstalk (control
input to signal
output)
V
C
= 10V (sq. wave)
t
r
, t
f
= 20ns
R
L
= 10kΩ
V
DD
(V)
10
5
10
15
5
T
Lo w
*
Min.
Max. Min.
Val ue
25
°C
T
High
*
Unit
Typ. Max. Min. Max.
50
35
20
15
6
MHz
70
40
30
ns
mV
Turn-on
V
IN
= V
DD
Propagation Delay t
r
, t
f
= 20ns
C
L
= 50pF
R
L
= 1k
Ω
Control Input
Repetition Rate
V
is
= V
DD
,V
SS
= GND
R
L
= 1k
Ω
to gnd
C
L
= 50pF
V
C
= 10V (square
wave centured on
5V)
t
r
, t
f
= 20ns
V
os
= 1/2V
os
@ 1kHz
10
15
9
9.5
5
7.5
C
I
Input Capacitance Any Input
pF
* T
Lo w
= – 55°C for
HCC
device : – 40°C for
HCF
device.
* T
High
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
TYPICAL APPLICATIONS
BIDIRECTIONAL SIGNAL TRANSMISSION VIA DIGITAL CONTROL LOGIC
5/11
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