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FDS6680AS
30V N-Channel PowerTrench
®
SyncFET™
May
2008
FDS6680AS
30V N-Channel PowerTrench
®
SyncFET
™
General Description
The FDS6680AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge.
The FDS6680AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680AS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDS6680 in parallel with a Schottky
diode.
tm
Features
•
11.5 A, 30 V.
R
DS(ON)
max= 10.0 mΩ @ V
GS
= 10 V
R
DS(ON)
max= 12.5 mΩ @ V
GS
= 4.5 V
•
•
•
Includes SyncFET Schottky body diode
Low gate charge (22nC typical)
High performance trench technology for extremely low
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
T
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 11.5A,
I
S
= 3.5 A
I
S
= 7 A
(Note 2)
(Note 2)
3.5
0.5
0.6
18
12
0.7
A
V
nS
nC
d
iF
/d
t
= 300 A/µs
(Note 3)
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
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