A Business Partner of Renesas Electronics Corporation.
NESG2031M05
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
FEATURES
•
Data Sheet
R09DS0035EJ0400
Rev. 4.00
Jun 20, 2012
•
•
•
The device is an ideal choice for low noise, high-gain at low current amplifications.
NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
NF = 1.3 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz
Maximum stable power gain: MSG = 21.5 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
High breakdown voltage technology for SiGe Tr. adopted: V
CEO
(absolute maximum ratings) = 5.0 V
Flat-lead 4-pin thin-type super minimold (M05) package
<R>
ORDERING INFORMATION
Part Number
NESG2031M05
NESG2031M05-T1
Order Number
NESG2031M05-A
NESG2031M05-T1-A
Package
Flat-lead 4-pin thin-
type supper minimold
(M05, 2012 PKG)
(Pb-Free)
Quantity
50 pcs
(Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed
taping
• Pin 3 (Collector), Pin 4
(Emitter) face the
perforation side of the tape
Remark
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
T
j
T
stg
Ratings
13.0
5.0
1.5
35
175
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
Note:
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 1 of 12
A Business Partner of Renesas Electronics Corporation.
NESG2031M05
<R>
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output
Power
3rd Order Intermodulation
Distortion Output Intercept
Point
Symbol
I
CBO
I
EBO
Test Conditions
MIN.
−
−
130
20
16.0
−
−
15.0
−
−
19.0
−
−
TYP.
−
−
190
25
18.0
0.8
1.3
17.0
10.0
0.15
21.5
13
23
MAX.
100
100
260
−
−
1.1
−
−
−
0.25
−
−
−
Unit
nA
nA
−
GHz
dB
dB
dB
dB
dB
pF
dB
dBm
dBm
h
FE
Note 1
f
T
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 2 V, I
C
= 5 mA
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CB
= 2 V, I
E
= 0, f = 1 MHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
S
21e
NF
NF
G
a
G
a
2
C
re
Note 2
MSG
Note 3
P
O (1 dB)
OIP
3
Notes: 1. Pulse measurement: PW
≤
350 s, Duty Cycle
≤
2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S
21
S
12
h
FE
CLASSIFICATION
<R>
Rank
Marking
h
FE
Value
FB/YFB
T1H
130 to 260
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 2 of 12
A Business Partner of Renesas Electronics Corporation.
NESG2031M05
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
Reverse Transfer Capacitance C
re
(pF)
250
Total Power Dissipation P
tot
(mW)
0.3
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
f = 1 MHz
200
175
150
100
50
0.2
0.1
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
100
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
Collector Current I
C
(mA)
100
10
1
0.1
0.01
0.001
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
10
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
100
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
Collector Current I
C
(mA)
35
30
25
20
15
10
5
0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
200
μ
A
180
μ
A
160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
I
B
= 20
μ
A
1
2
3
4
5
6
10
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
Remark
The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 3 of 12
A Business Partner of Renesas Electronics Corporation.
NESG2031M05
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
1 000
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
DC Current Gain h
FE
100
DC Current Gain h
FE
100
10
0.1
1
10
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
DC Current Gain h
FE
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Remark
The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 4 of 12
A Business Partner of Renesas Electronics Corporation.
NESG2031M05
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
35
Gain Bandwidth Product f
T
(GHz)
30
25
20
15
10
5
0
1
V
CE
= 1 V
f = 2 GHz
35
30
25
20
15
10
5
0
1
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 2 V
f = 2 GHz
10
Collector Current I
C
(mA)
100
10
Collector Current I
C
(mA)
100
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 3 V
f = 2 GHz
40
35
30
25
20
15
10
5
0
0.1
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
V
CE
= 1 V
I
C
= 20 mA
MSG
MAG
30
25
20
15
10
5
0
1
|S
21e
|
2
10
Collector Current I
C
(mA)
100
1
10
100
Frequency f (GHz)
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1
V
CE
= 2 V
I
C
= 20 mA
MSG
MAG
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
25
20
15
10
5
0
0.1
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
V
CE
= 3 V
I
C
= 20 mA
MSG
MAG
|S
21e
|
2
|S
21e
|
2
1
10
100
1
10
100
Frequency f (GHz)
Frequency f (GHz)
Remark
The graph indicates nominal characteristics.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 5 of 12
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