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FJP3307D — High Voltage Fast Switching NPN Power Transistor
July 2008
FJP3307D
High Voltage Fast Switching NPN Power Transistor
Features
• Built-in Diode between Collector and Emitter
• Suitable for Electronic Ballast and Switch Mode Power Supplies
Internal Schematic Diagram
C
B
1
1.Base
TO-220
2.Collector
3.Emitter
E
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature
Value
700
400
9
8
16
4
80
150
-55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
* Pulse Test: PW = 300ms, Duty Cycle = 2% Pulsed
Electrical Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
T
C
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Conditions
I
C
= 500μA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500μA, I
C
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 2A
V
CE
= 5V, I
C
= 5A
I
C
= 2A, I
B
= 0.4A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 2A
Min.
700
400
9
Typ.
Max
Units
V
V
V
1
8
5
40
30
1
2
3
mA
V
V
V
© 2008 Fairchild Semiconductor Corporation
FJP3307D Rev. A
www.fairchildsemi.com
1
FJP3307D — High Voltage Fast Switching NPN Power Transistor
Typical Characteristics
Figure 1. Static Characterstic
5.0
4.5
Figure 2. DC Current Gain (H1 Grade)
100
V
CE
= 5V
I
B
=300mA
T
C
= 125 C
o
I
C
[A], COLLECTOR CURRENT
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
6
T
C
= 75 C
o
h
FE
, DC CURRENT GAIN
T
C
= - 25 C
10
o
T
C
= 25 C
o
I
B
=100mA
I
B
=50mA
7
8
9
10
1
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. DC Current Gain (H2 Grade)
100
T
C
= 125 C
o
Figure 4. Collector-Emitter Saturation Voltage
10
T
C
= 75 C
o
V
CE
= 5V
V
CE
(sat),[V] SATURATION VOLTAGE
I
C
= 5 I
B
T
C
= 125 C
1
T
C
= 75 C
T
C
= 25 C
T
C
= - 25 C
0.1
o
o
o
o
h
FE
, DC CURRENT GAIN
T
C
= - 25 C
o
T
C
= 25 C
o
10
1
0.1
1
10
0.01
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
10
Figure 6. Output Capacitance
1000
I
C
= 5 I
B
V
BE
(sat)[V], SATURATION VOLTAGE
C
OB
[pF], OUTPUT CAPACITANCE
f = 1MHz, I
E
= 0
1
T
C
= 25 C
T
C
= - 25 C
o
o
100
T
C
= 125 C
o
T
C
= 75 C
o
0.1
0.01
10
0.1
1
10
1
10
100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
© 2008 Fairchild Semiconductor Corporation
FJP3307D Rev. A
www.fairchildsemi.com
3
FJP3307D — High Voltage Fast Switching NPN Power Transistor
Typical Characteristics
(Continued)
Figure 7. Power Derating
P
C
[W}, COLLECTOR POWER DISSIPATION
100
Figure 8. Reverse Biased Safe Operating Area
100
80
I
C
[A], COLLECTOR CURRENT
10
60
40
1
20
V
CC
= 50V, I
B1
= - I
B2
= 1A
L = 1mH
0.1
10
0
0
25
50
o
75
100
125
150
175
200
100
1000
T
C
[ C], CASE TEMPERATURE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Biased Safe Operating Area
100
I
C
[A], COLLECTOR CURREMT
I
C
(MAX), Pulse
10
I
C
(MAX), DC
1ms
100
μ
s
10
μ
s
1
0.1
T
C
= 25 C
Single Pulse
0.01
1
10
100
1000
o
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
© 2008 Fairchild Semiconductor Corporation
FJP3307D Rev. A
www.fairchildsemi.com
4
Embedded System
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