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BAS581-02V-GS08

Description
Schottky Diodes u0026 Rectifiers 40 Volt 30mA Single
CategoryDiscrete semiconductor    diode   
File Size322KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BAS581-02V-GS08 Overview

Schottky Diodes u0026 Rectifiers 40 Volt 30mA Single

BAS581-02V-GS08 Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.37 V
Maximum non-repetitive peak forward current0.2 A
Number of components1
Maximum operating temperature125 °C
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Base Number Matches1
BAS70-00 to BAS70-06
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
BAS70-00
3
BAS70-04
3
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
2
Top View
1
2
1
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
BAS70-05
3
BAS70-06
3
Top View
1
2
1
2
PARTS TABLE
PART
BAS70-00
BAS70-04
BAS70-05
BAS70-06
ORDERING CODE
BAS70-00-E3-08 or BAS70-00-E3-18
BAS70-00-HE3-08 or BAS70-00-HE3-18
BAS70-04-E3-08 or BAS70-04-E3-18
BAS70-04-HE3-08 or BAS70-04-HE3-18
BAS70-05-E3-08 or BAS70-05-E3-18
BAS70-05-HE3-08 or BAS70-05-HE3-18
BAS70-06-E3-08 or BAS70-06-E3-18
BAS70-06-HE3-08 or BAS70-06-HE3-18
INTERNAL CONSTRUCTION
Single diode
Dual diodes serial
Dual diodes common cathode
Dual diodes common anode
TYPE MARKING
73
74
Tape and reel
75
76
REMARKS
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation
(1)
Note
(1)
Device on fiberglass substrate, see layout on next page.
(1)
(1)
TEST CONDITION
SYMBOL
V
RRM
= V
RRM
= V
R
I
F
VALUE
70
200
600
200
UNIT
V
mA
mA
mW
t
p
< 1 s
I
FSM
P
tot
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Note
(1)
Device on fiberglass substrate, see layout on next page.
(1)
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
500
125
- 65 to + 150
- 55 to + 125
UNIT
K/W
°C
°C
°C
Rev. 2.0, 25-Feb-13
Document Number: 85702
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BAS581-02V-GS08 Related Products

BAS581-02V-GS08 BAS70-05-E3-08 BAS70-05-HE3-18 BAS70-04-HE3-08 BAS70-02V-GS08 BAS40-02V-GS08 BAS70-04-V-GS18 BAS70-06-E3-08 BAS70-04-E3-18 BAS70-05-V-GS08
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