TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
TP0610L
TP0610T
VP0610L
VP0610T
BS250
V
(BR)DSS
Min (V)
−60
−60
−60
−60
−45
r
DS(on)
Max (W)
10 @ V
GS
=
−10
V
10 @ V
GS
=
−10
V
10 @ V
GS
=
−10
V
10 @ V
GS
=
−10
V
14 @ V
GS
=
−10
V
V
GS(th)
(V)
−1
to
−2.4
−1
to
−2.4
−1
to
−3.5
−1
to
−3.5
−1
to
−3.5
I
D
(A)
−0.18
−0.12
−0.18
−0.12
−0.18
FEATURES
D
D
D
D
D
High-Side Switching
Low On-Resistance: 8
W
Low Threshold:
−1.9
V
Fast Switching Speed: 16 ns
Low Input Capacitance: 15 pF
BENEFITS
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
APPLICATIONS
D
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
D
Battery Operated Systems
D
Power Supply, Converter Circuits
D
Motor Control
TO-226AA
(TO-92)
S
G
1
Device Marking
Front View
TP0610L
“S” TP
0610L
xxll
TO-92-18RM
(TO-18 Lead Form)
D
G
1
Device Marking
Front View
BS250
2
“S” BS
250
xxll
“S” = Siliconix Logo
xxll
= Date Code
G
1
3
S
2
D
TO-236
(SOT-23)
Marking Code:
TP0610T: TOwll
VP0610T: VOwll
w
= Week Code
lL
= Lot Traceability
Top View
TP0610T
VP0610T
2
D
3
Top View
TP0610L
VP0610L
VP0610L
“S” VP
0610L
xxll
S
3
Top View
BS250
“S” = Siliconix Logo
xxll
= Date Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain
Current
a
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
TP0610L
−60
"30
−0.18
−0.11
−0.8
0.8
0.32
156
TP0610T
−60
"30
−0.12
−0.07
−0.4
0.36
0.14
350
VP0610L
−60
"30
−0.18
−0.11
−0.8
0.8
0.32
156
−55
to 150
VP0610T
−60
"30
−0.12
−0.07
−0.4
0.36
0.14
350
BS250
−45
"25
−0.18
Unit
V
A
0.83
150
Power Dissipation
Thermal Resistance, Junction-to-Ambient
W
_C/W
_C
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
For applications information see AN804.
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
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1
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
TP0610L/T
VP0610L/T
BS250
Parameter
Static
Drain Source
Drain-Source
Breakdown Voltage
Gate-Threshold
Voltage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)DSS
V
GS(th)
V
GS
= 0 V, I
D
=
−10
mA
V
GS
= 0 V, I
D
=
−100
mA
V
DS
= V
GS
, I
D
=
−1
mA
V
DS
= 0 V, V
GS
=
"20
V
−70
−60
−60
−45
V
−3.5
−1.9
−1
−2.4
"10
"50
−1
−3.5
"10
−1
Gate-Body Leakage
y
g
I
GSS
V
DS
= 0 V, V
GS
=
"20
V, T
J
= 125_C
V
DS
= 0 V, V
GS
=
"15
V
V
DS
=
−48
V, V
GS
= 0 V
nA
"20
−1
−200
−0.5
m
mA
−1
−200
Zero G
Gate Voltage
Drain Current
I
DSS
V
DS
=
−48
V, V
GS
= 0 V, T
J
= 125_C
V
DS
=
−25
V, V
GS
= 0 V
V
DS
=
−10
V, V
GS
=
−4.5
V
−180
L Suffix
T Suffix
11
L Suffix
L Suffix
T Suffix
L Suffix
T Suffix
8
15
6.5
20
90
−1.1
80
60
−750
−50
On-State Drain
O S
Current
b
I
D(on)
V
DS
=
−10
V V
GS
=
−10
V
10 V,
10
V
GS
=
−4.5
V, I
D
=
−25
mA
−600
−220
25
10
20
10
10
20
10
14
mA
Drain-Source
On-Resistance
b
r
DS( )
DS(on)
V
GS
=
−10
V, I
D
=
−0.5
A
V
GS
=
−10
V, I
D
=
−0.5
A, T
J
= 125_C
V
GS
=
−10
V, I
D
=
−0.2
A
V
DS
=
−10
V, I
D
=
−0.5
A
V
DS
=
−10
V, I
D
=
−0.1
A
I
S
=
−0.5
A, V
GS
= 0 V
W
Forward
Transconductance
b
Diode Forward
Voltage
g
f
fs
V
SD
70
mS
V
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
C
iss
C
oss
C
rss
V
DS
=
−25
V, V
GS
= 0 V
f = 1 MHz
15
10
3
60
25
5
60
25
5
pF
Switching
c
Turn-On Time
Turn-Off Time
t
ON
t
OFF
V
DD
=
−25
V, R
L
= 133
W
25
I
D
^
−0.18
A, V
GEN
=
−10
V, R
g
= 25
W
8
8
10
10
ns
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v2%.
c. Switching time is essentially independent of operating temperature.
VPDS06
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Document Number: 70209
S-41260—Rev. H, 05-Jul-04
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
V
GS
= 10 V
7V
0.8
I D
−
Drain Current (A)
I D
−
Drain Current (mA)
8V
900
25_C
600
125_C
1200
T
J
=
−55_C
Transfer Characteristics
0.6
6V
0.4
5V
0.2
4V
0.0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
300
0
0
2
4
6
8
10
V
GS
−
Gate-to-Source Voltage (V)
40
V
GS
= 0 V
On-Resistance vs. Drain Current
20
Capacitance
r DS(on)
−
On-Resistance (
W
)
16
V
GS
= 4.5 V
C
−
Capacitance (pF)
32
C
iss
24
12
V
GS
= 5 V
8
V
GS
= 10 V
16
C
oss
8
C
rss
4
0
0
200
400
600
800
1000
I
D
−
Drain Current (mA)
0
0
5
10
15
20
25
V
DS
−
Drain-to-Source Voltage (V)
15
V
GS
−
Gate-to-Source Voltage (V)
I
D
= 500 mA
12
Gate Charge
1.8
1.5
V
DS
= 30 V
r
DS(on)
−
On-Resiistance
(Normalized)
V
DS
= 48 V
1.2
0.9
0.6
0.3
0.0
−50
On-Resistance vs. Junction Temperature
V
GS
= 10 V @ 500 mA
9
V
GS
= 4.5 V @ 25 mA
6
3
0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
−25
0
25
50
75
100
125
150
Q
g
−
Total Gate Charge (nC)
T
J
−
Junction Temperature (_C)
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
www.vishay.com
3
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
1000
V
GS
= 0 V
r DS(on)
−
On-Resistance (
W
)
8
I
D
= 500 mA
10
On-Resistance vs. Gate-Source Voltage
I
S
−
Source Current (A)
100
T
J
= 125_C
6
4
10
T
J
= 25_C
T
J
=
−55_C
I
D
= 200 mA
2
1
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
−
Gate-to-Source Voltage (V)
Threshold Voltage Variance Over Temperature
0.5
0.4
V GS(th) Variance (V)
0.3
Power (W)
0.2
0.1
−0.0
−0.1
−0.2
−0.3
−50
0.5
0
−25
0
25
50
75
100
125
150
0.01
2
1.5
I
D
= 250
mA
3
2.5
Single Pulse Power, Junction-to-Ambient
1
T
A
= 25_C
0.1
1
Time (sec)
10
100
600
T
J
−
Junction Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 350_C/W
t
1
t
2
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
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Document Number: 70209
S-41260—Rev. H, 05-Jul-04
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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