DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA144W series
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Product data sheet
Supersedes data of 2004 Mar 23
2004 Aug 05
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit driver.
DESCRIPTION
PDTA144W series
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
TYP.
−
−
47
22
MAX.
−50
−100
−
−
UNIT
V
mA
kΩ
kΩ
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PDTA144WE
PDTA144WEF
PDTA144WK
PDTA144WM
PDTA144WS
PDTA144WT
PDTA144WU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
5D
2E
46
F8
TA144W
*43
(1)
*28
(1)
PDTC144WE
PDTC144WEF
PDTC144WK
PDTC144WM
PDTC144WS
PDTC144WT
PDTC144WU
MARKING CODE
NPN COMPLEMENT
2004 Aug 05
2
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PDTA144W series
PINNING
TYPE NUMBER
PDTA144WS
handbook, halfpage
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
2
2
R1
1
R2
3
MAM338
DESCRIPTION
base
collector
emitter
1
2
3
3
PDTA144WE
PDTA144WEF
PDTA144WK
PDTA144WT
PDTA144WU
1
Top view
2
MDB271
1
2
handbook, halfpage
base
emitter
collector
3
R1
1
R2
3
3
2
PDTA144WM
handbook, halfpage
1
2
3
R1
3
1
Bottom view
MDB267
base
emitter
collector
3
2
1
R2
2
2004 Aug 05
3
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PDTA144WE
PDTA144WEF
PDTA144WK
PDTA144WM
PDTA144WS
PDTA144WT
PDTA144WU
−
−
−
−
−
−
−
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
PDTA144W series
VERSION
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
leadless ultra small plastic package; 3 solder lands;
body 1.0 x 0.6 x 0.5 mm
plastic single-ended leaded (through hole) package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
V
I
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
T
stg
T
j
T
amb
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
μm
copper strip line.
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
−
−
−
−
−
−
−
−65
−
−65
500
250
250
200
150
250
250
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
−
−
−
−
+10
−40
−100
−100
V
V
mA
mA
CONDITIONS
open emitter
open base
open collector
−
−
−
MIN.
MAX.
−50
−50
−10
V
V
V
UNIT
2004 Aug 05
4
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
Note
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions.; FR4 with 60
μm
copper strip line.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
I
E
= i
e
= 0 A; V
CB
=
−10
V;
f = 1 MHz
CONDITIONS
V
CB
=
−50
V; I
E
= 0 A
V
CE
=
−30
V; I
B
= 0 A
V
CE
=
−30
V; I
B
= 0 A; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V; I
C
=
−5
mA
I
C
=
−100 μA;
V
CE
=
−5
V
I
C
=
−2
mA; V
CE
=
−0.3
V
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
T
amb
≤
25
°C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
PDTA144W series
VALUE
250
500
500
625
830
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
MIN.
−
−
−
−
60
−
−
−4
33
0.37
−
TYP.
−
−
−
−
−
−
−1.7
−2.7
47
0.47
−
MAX.
−100
−1
−50
−110
−
−150
−1.2
−
61
0.57
3
UNIT
nA
μA
μA
μA
mV
V
V
kΩ
collector-emitter saturation voltage I
C
=
−10
mA; I
B
=
−0.5
mA
pF
2004 Aug 05
5
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