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IRFU014

Description
MOSFET N-Chan 60V 7.7 Amp
CategoryDiscrete semiconductor    The transistor   
File Size869KB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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IRFU014 Overview

MOSFET N-Chan 60V 7.7 Amp

IRFU014 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeTO-251AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)47 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)7.7 A
Maximum drain current (ID)7.7 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)25 W
Maximum pulsed drain current (IDM)31 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFR014, IRFU014, SiHFR014, SiHFU014
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
11
3.1
5.8
Single
D
DPAK
(TO-252)
D
D
FEATURES
60
0.20
Dynamic dV/dt Rating
Surface Mount (IRFR014, SiHFR014)
Straight Lead (IRFU014, SiHFU014)
Available in Tape and Reel
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
IPAK
(TO-251)
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
G
G
S
G
D S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR014-GE3
IRFR014PbF
SiHFR014-E3
DPAK (TO-252)
SiHFR014TRL-GE3
IRFR014TRLPbF
a
SiHFR014TL-E3
a
DPAK (TO-252)
SiHFR014TR-GE3
IRFR014TRPbF
a
SiHFR014T-E3
a
IPAK (TO-251)
SIHFU014-GE3
IRFU014PbF
SiHFU014-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
for 10 s
T
C
= 25 °C
T
A
= 25 °C
E
AS
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
60
± 20
7.7
4.9
31
0.20
0.020
27.4
25
2.5
4.5
- 55 to + 150
260
W/°C
mJ
W
V/ns
°C
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 924 μH, R
g
= 25
,
I
AS
= 7.7 A (see fig. 12).
c. I
SD
10 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0170-Rev. E, 04-Feb-13
Document Number: 91263
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Is it Rohs certified? incompatible conform to incompatible conform to conform to
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown not_compliant unknown compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 47 mJ 47 mJ 47 mJ 47 mJ 47 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A
Maximum drain current (ID) 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A
Maximum drain-source on-resistance 0.2 Ω 0.2 Ω 0.2 Ω 0.2 Ω 0.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251AA TO-252AA TO-252AA TO-252AA TO-252AA
JESD-30 code R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e3 e0 e3 e3
Number of components 1 1 1 1 1
Number of terminals 3 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT APPLICABLE 260 NOT SPECIFIED 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 25 W 25 W 25 W 25 W 25 W
Maximum pulsed drain current (IDM) 31 A 31 A 31 A 31 A 31 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO YES YES YES YES
Terminal surface TIN LEAD Tin (Sn) TIN LEAD Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT APPLICABLE 40 NOT SPECIFIED 30 30
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Maker Vishay - Vishay Vishay Vishay
Parts packaging code TO-251AA TO-252AA - TO-252AA TO-252AA
Contacts 3 3 - 3 3
Is it lead-free? - Lead free - Lead free Lead free
Shell connection - DRAIN DRAIN DRAIN DRAIN
Humidity sensitivity level - 1 - 1 1
Base Number Matches - 1 1 1 1
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