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BZW03D110-TR

Description
Zener Diodes 110 Volt 20W 10%
CategoryDiscrete semiconductor    diode   
File Size118KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BZW03D110-TR Overview

Zener Diodes 110 Volt 20W 10%

BZW03D110-TR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
Parts packaging codeSOD
package instructionO-LALF-W2
Contacts2
Manufacturer packaging codeSOD-64
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage157 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak reverse power dissipation1000 W
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.85 W
Certification statusNot Qualified
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BZW03-Series
www.vishay.com
Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949588
APPLICATIONS
• Voltage regulators and transient suppression
• Circuits
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
6.8 to 270
5 to 175
Pulse current
Single
UNIT
V
mA
ORDERING INFORMATION
(Example)
DEVICE NAME
BZW03C6V8
BZW03C6V8
ORDERING CODE
BZW03C6V8-TR
BZW03C6V8-TAP
TAPED UNITS
2500 per 10" tape and reel
2500 per ammopack
MINIMUM ORDER QUANTITY
12 500
12 500
PACKAGE
PACKAGE NAME
SOD-64
WEIGHT
858 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 1 A
t
p
= 100 μs, T
j
= 25 °C
I = 25 mm, T
L
= constant
On PC board with spacing 37.5 mm
TEST CONDITION
I = 10 mm, T
L
= 25 °C
T
amb
= 45 °C
SYMBOL
P
tot
P
tot
P
ZRM
P
ZSM
R
thJA
R
thJA
T
J
T
stg
V
F
VALUE
6000
mW
1850
20
1000
30
K/W
70
175
- 65 to + 175
1.2
°C
°C
V
W
W
UNIT
Rev. 1.7, 11-Sep-12
Document Number: 85602
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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