DS1258AB-100 datasheet, PDF - EEWORLD Datasheet

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DS1258AB-100: DescriptionNVRAM; Categorystorage; File Size199KB，8 Pages; ManufacturerMaxim; Websitehttps://www.maximintegrated.com/en.html

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DS1258AB-100 Overview

NVRAM

DS1258AB-100 Parametric

Parameter Name	Attribute value
Product Category	NVRAM
Manufacturer	Maxim
Interface Type	Parallel
Memory Size	2 Mbit
Organization	128 k x 16
Data Bus Width	16 bit
Access Time	100 ns
Supply Voltage - Max	5.25 V
Supply Voltage - Min	4.75 V
Operating Supply Current	170 mA
Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 70 C
Operating Supply Voltage	5 V

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DS1258Y/AB

128k x 16 Nonvolatile SRAM

www.maxim-ic.com

FEATURES

10-Year Minimum Data Retention in the

Absence of External Power

Data is Automatically Protected During a

Power Loss

Separate Upper Byte and Lower Byte Chip-

Select Inputs

Unlimited Write Cycles

Low-Power CMOS

Read and Write Access Times as Fast as 70ns

Lithium Energy Source is Electrically

Disconnected to Retain Freshness Until

Power is Applied for the First Time

Full

±10%

Operating Range (DS1258Y)

Optional

±5%

Operating Range (DS1258AB)

Optional Industrial Temperature Range of

-40°C to +85°C, Designated IND

PIN ASSIGNMENT

CEU

CEL

DQ15

DQ14

DQ13

DQ12

DQ11

DQ10

DQ9

DQ8

GND

DQ7

DQ6

DQ5

DQ4

DQ3

DQ2

DQ1

DQ0

A16

A15

A14

A13

A12

A11

A10

GND

40-Pin Encapsulated Package

740mil Extended

PIN DESCRIPTION

A0 to A16

DQ0 to DQ15

CEU

CEL

GND

- Address Inputs

- Data In/Data Out

- Chip Enable Upper Byte

- Chip Enable Lower Byte

- Write Enable

- Output Enable

- Power (+5V)

- Ground

DESCRIPTION

The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as

131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control

circuitry that constantly monitors V

for an out-of-tolerance condition. When such a condition occurs,

the lithium energy source is automatically switched on and write protection is unconditionally enabled to

prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV

128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write

cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

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DS1258AB-100 Related Products

	DS1258AB-100	DS1258AB-70IND	DS1258Y-100	DS1258Y-70IND	DS1258AB-70	DS1258Y-70
Description	NVRAM	NVRAM	NVRAM	NVRAM	NVRAM	NVRAM
Product Category	NVRAM	-	NVRAM	-	NVRAM	NVRAM
Manufacturer	Maxim	-	Maxim	-	Maxim	Maxim
Interface Type	Parallel	-	Parallel	-	Parallel	Parallel
Memory Size	2 Mbit	-	2 Mbit	-	2 Mbit	2 Mbit
Organization	128 k x 16	-	128 k x 16	-	128 k x 16	128 k x 16
Data Bus Width	16 bit	-	16 bit	-	16 bit	16 bit
Access Time	100 ns	-	100 ns	-	70 ns	70 ns
Supply Voltage - Max	5.25 V	-	5.5 V	-	5.25 V	5.5 V
Supply Voltage - Min	4.75 V	-	4.5 V	-	4.75 V	4.5 V
Operating Supply Current	170 mA	-	170 mA	-	170 mA	170 mA
Minimum Operating Temperature	0 C	-	0 C	-	0 C	0 C
Maximum Operating Temperature	+ 70 C	-	+ 70 C	-	+ 70 C	+ 70 C
Operating Supply Voltage	5 V	-	5 V	-	5 V	5 V

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