Ordering number : EN2113E
2SB1202/2SD1802
Bipolar Transistor
(–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA
Applicaitons
•
http://onsemi.com
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
•
•
•
•
Large current capacitance and wide ASO
Adoption of FBET and MBIT processes
•
Fast switching speed
Low collector to emitter saturation voltage
Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller
Specifications
( ): 2SB1202
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
(-
-)60
(--)50
(-
-)6
(--)3
(-
-)6
Unit
V
V
V
A
A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7518-003
6.5
5.0
4
2.3
1.5
0.5
Package Dimensions
unit : mm (typ)
7003-003
2SB1202S-E
2SB1202T-E
2SD1802S-E
2SD1802T-E
6.5
5.0
4
2.3
1.5
0.5
2SB1202S-TL-E
2SB1202T-TL-E
2SD1802S-TL-E
2SD1802T-TL-E
5.5
7.0
0.8
1.6
7.5
0.6
1
2
3
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP
0.6
1
2
0.8
1.2
3
2.5
0.85
0.7
5.5
7.0
0.5
0.85
1.2
0 to 0.2
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
2.3
2.3
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK
• Minimum Packing Quantity : 700 pcs./reel
Marking(TP, TP-FA)
B1202
RANK
LOT No.
Packing Type (TP-FA) : TL
D1802
Electrical Connection
1
2,4
RANK
LOT No.
TL
(For PNP, the polarity is reversed.)
3
Semiconductor Components Industries, LLC, 2013
September, 2013
92513 TKIM/82912 TKIM/42512EA TKIM/13004TN (KT)/92098HA (KT)/8259MO/4137KI/4116KI, TS No.2113-1/7
2SB1202/2SD1802
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
1
15
150
--55 to +150
Unit
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)100mA
VCE=(--)2V, IC=(--)3A
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)2A, IB=(--)100mA
VCE=(--)2V, IC=(--)100mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
See specified Test Circuit.
(--)60
(--)50
(-
-)6
70
(450)650
35
100*
35
150
(39)25
(--0.35)0.19
(--)0.94
(--0.7)0.5
(-
-)1.2
MHz
pF
mV
V
V
V
V
ns
ns
ns
Ratings
min
typ
max
(--)1
(-
-)1
560*
Unit
μA
μA
*
: The 2SB1202/2SD1802 are classified by 100mA hFE as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
U
280 to 560
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=25V
RB
RL
25Ω
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
Ordering Information
Device
2SB1202S-E
2SB1202T-E
2SD1802S-E
2SD1802T-E
2SB1202S-TL-E
2SB1202T-TL-E
2SD1802S-TL-E
2SD1802T-TL-E
Package
TP
TP
TP
TP
TP-FA
TP-FA
TP-FA
TP-FA
Shipping
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
Pb Free
memo
No.2113-2/7
2SB1202/2SD1802
--5
IC -- VCE
2SB1202
5
IC -- VCE
2SD1802
mA
--200
Collector Current, IC -- A
Collector Current, IC -- A
--4
mA
--100
--50mA
4
A
100m
80mA
60mA
40mA
--3
3
20mA
2
--2
--20mA
--10mA
10mA
5mA
--1
--5mA
1
0
0
--0.4
--0.8
--1.2
IB=0
--1.6
--2.0
ITR09162
0
0
0.4
0.8
1.2
IB=0
1.6
2.0
ITR09163
Collector to Emitter Voltage, VCE -- V
--2.0
Collector to Emitter Voltage, VCE -- V
2.0
IC -- VCE
IC -- VCE
8mA
2SD1802
mA
--14
--1.6
A
--12m
A
--10m
--8mA
2SB1202
Collector Current, IC -- A
Collector Current, IC -- A
1.6
7mA
6mA
--1.2
--6mA
--4mA
--2mA
1.2
5mA
4mA
--0.8
0.8
3mA
2mA
--0.4
0.4
1mA
0
0
--4
--8
--12
IB=0
--16
--20
ITR09164
0
0
4
8
12
IB=0
16
20
ITR09165
Collector to Emitter Voltage, VCE -- V
--3.6
--3.2
IC -- VBE
Collector to Emitter Voltage, VCE -- V
3.6
IC -- VBE
2SB1202
VCE= --2V
3.2
2SD1802
VCE=2V
Collector Current, IC -- A
Collector Current, IC -- A
--2.8
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
2.8
2.4
2.0
1.6
Ta=7
5
°
C
25
°
C
--25
°
C
0.8
0.4
0
0
0.2
0.4
0.6
Ta=
75
°
C
25
°
C
--25
°
C
0.8
1.0
1.2
1.2
ITR09167
Base to Emitter Voltage, VBE -- V
1000
7
5
ITR09166
1000
Base to Emitter Voltage, VBE -- V
hFE -- IC
hFE -- IC
2SD1802
VCE=2V
2SB1202
VCE= --2V
7
5
DC Current Gain, hFE
3
2
Ta=75
°
C
DC Current Gain, hFE
3
2
25
°
C
--25
°
C
100
7
5
5 7 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5
Ta=75
°
C
25
°
C
--25
°
C
100
7
5
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5
Collector Current, IC -- A
ITR09168
Collector Current, IC -- A
ITR09169
No.2113-3/7
2SB1202/2SD1802
1000
7
f T -- IC
Gain-Bandwidth Product, f T -- MHz
2SB1202
VCE= --10V
1000
7
5
3
2
f T -- IC
2SD1802
VCE=10V
Gain-Bandwidth Product, f T -- MHz
5
3
2
100
7
5
3
2
100
7
5
3
2
10
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
10
0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
Collector Current, IC -- A
5
3
ITR09170
5
3
Collector Current, IC -- A
ITR09171
Cob -- VCB
2SB1202
f=1MHz
Output Capacitance, Cob -- pF
Cob -- VCB
2SD1802
f=1MHz
Output Capacitance, Cob -- pF
2
2
100
7
5
3
2
100
7
5
3
2
10
--1.0
10
2
3
5
7
--10
2
3
5
Collector to Base Voltage, VCB -- V
--1000
--100
ITR09172
7
1.0
2
3
5
7
10
2
3
5
Collector to Base Voltage, VCB -- V
1000
100
ITR09173
7
VCE(sat) -- IC
Collector to Emitter
Saturation Voltage, VCE(sat) -- mV
2SB1202
IC / IB=20
VCE(sat) -- IC
2SD1802
IC
/ IB=20
Collector to Emitter
Saturation Voltage, VCE(sat) -- mV
7
5
3
2
7
5
3
2
--100
7
5
3
2
25
°
C
100
7
5
3
2
C
25
°
= --
Ta
C
75
°
25
°
C
--25
Ta=
75
°
C
°
C
--10
5
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
10
5 7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
--10
ITR09174
10
VBE(sat) -- IC
Collector Current, IC -- A
ITR09175
VBE(sat) -- IC
Base to Emitter
Saturation Voltage, VBE(sat) -- V
Base to Emitter
Saturation Voltage, VBE(sat) -- V
7
5
2SB1202
IC / IB=20
7
5
2SD1667
2SD1802
IC
/ IB=20
3
2
3
2
--1.0
7
5
3
5 7 --0.01
Ta= --25
°
C
75
°
C
25
°
C
1.0
7
5
3
Ta= --25
°
C
75
°
C
25
°
C
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5
Collector Current, IC -- A
ITR09176
Collector Current, IC -- A
ITR09177
No.2113-4/7
2SB1202/2SD1802
10
5
3
ASO
ICP=6A
IC=3A
100ms
DC
2SB1202 / 2SD1802
1m
s
Collector Dissipation, PC -- W
16
15
14
12
10
8
6
4
2
1
0
PC -- Ta
2SB1202 / 2SD1802
Collector Current, IC -- A
2
1.0
5
3
2
0.1
5
3
2
0.01
3
DC
op
era
tio
nT
a=
2
5
°
C
Id
ea
lh
ea
td
iss
ip
at
io
n
ms
10
C
5
°
=2
Tc
Tc=25
°
C
Single pulse
For PNP, the minus sign is omitted.
5
7 1.0
2
3
5
7
10
2
3
Collector to Emitter Voltage, VCE -- V
t
era
op
ion
No heat sink
0
20
40
60
80
100
120
140
160
5 7 100
ITR09178
Ambient Temperature, Ta --
°
C
ITR09179
No.2113-5/7
京公网安备 11010802033920号
EEWORLD
