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BF620115

Description
Bipolar Transistors - BJT NPN Epitaxial Sil
Categorysemiconductor    Discrete semiconductor   
File Size74KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Bipolar Transistors - BJT NPN Epitaxial Sil

BF620115 Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerNXP
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max300 V
Collector- Base Voltage VCBO300 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current0.05 A
Gain Bandwidth Product fT60 MHz
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min50
DC Current Gain hFE Max50 at 25 mA at 20 V
Height1.6 mm
Length4.6 mm
Minimum Operating Temperature- 65 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Pd - Power Dissipation1100 mW
Factory Pack Quantity1000
Width2.6 mm
Unit Weight0.004603 oz
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BF620; BF622
NPN high-voltage transistors
Product data sheet
Supersedes data of 1999 Apr 21
2004 Dec 14
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