BCR-119S-E6433 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > semiconductor> Discrete semiconductor> BCR-119S-E6433

BCR-119S-E6433: DescriptionBipolar Transistors - Pre-Biased NPN silicon Digital TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size250KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

Download Datasheet Parametric Compare View All

BCR-119S-E6433 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	BCR-119S-E6433	-	-	View	Buy Now

BCR-119S-E6433 Overview

Bipolar Transistors - Pre-Biased NPN silicon Digital TRANSISTOR

BCR-119S-E6433 Parametric

Parameter Name	Attribute value
Product Category	Bipolar Transistors - Pre-Biased
Manufacturer	Infineon
RoHS	Details
Configuration	Dual
Transistor Polarity	NPN
Typical Input Resistor	4.7 kOhms
Mounting Style	SMD/SMT
Package / Case	SOT-363-6
DC Collector/Base Gain hfe Min	120
Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA
Peak DC Collector Current	100 mA
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape
Packaging	Reel
Height	0.9 mm
Length	2 mm
Minimum Operating Temperature	- 65 C
Factory Pack Quantity	10000
Width	1.25 mm
Unit Weight	0.000265 oz

Preview

Download Datasheet

View All

BCR119...

NPN silicon Digital Transistor

•

Switching circuit, inverter, interface circuit,

driver circuit

•

Built in resistor (R

=4.7 kΩ)

•

BCR119S: Two internally isolated

transistors with good matching

in one multichip package

•

BCR119S: For orientation in reel see

package information below

•

Pb-free (RoHS compliant) package

•

Qualified according AEC Q101

BCR119/F/W

BCR119S

TR1

TR2

EHA07264

EHA07265

Type

BCR119

BCR119F

BCR119S

BCR119W

Pb-containing

Marking

WKs

1=B

Pin Configuration

2=E

3=C

Package

SOT23

TSFP-3

SOT323

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

package may be available upon special request

2007-08-02

BCR-119S-E6433 Related Products

	BCR-119S-E6433	BCR-119W-E6327	BCR-119S-E6327
Description	Bipolar Transistors - Pre-Biased NPN silicon Digital TRANSISTOR	Bipolar Transistors - Pre-Biased NPN silicon Digital TRANSISTOR	Bipolar Transistors - Pre-Biased NPN silicon Digital TRANSISTOR
Product Category	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased
Manufacturer	Infineon	Infineon	Infineon
RoHS	Details	Details	Details
Configuration	Dual	Single	Dual
Transistor Polarity	NPN	NPN	NPN
Typical Input Resistor	4.7 kOhms	4.7 kOhms	4.7 kOhms
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-363-6	SOT-323-3	SOT-363-6
DC Collector/Base Gain hfe Min	120	120	120
Collector- Emitter Voltage VCEO Max	50 V	50 V	50 V
Continuous Collector Current	100 mA	100 mA	100 mA
Peak DC Collector Current	100 mA	100 mA	100 mA
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Height	0.9 mm	0.9 mm	0.9 mm
Length	2 mm	2 mm	2 mm
Minimum Operating Temperature	- 65 C	- 65 C	- 65 C
Factory Pack Quantity	10000	3000	3000
Width	1.25 mm	1.25 mm	1.25 mm
Packaging	Reel	Reel	Reel
Unit Weight	0.000265 oz	-	0.000265 oz

Recommended Resources

Keyboard-display interface circuit

Delay, reverb unit circuit

RTD cold junction compensation thermocouple input circuit 02

Small program-controlled switch power supply system circuit diagram

16A gate transistor control circuit

Split-phase starting single-phase motor

Principle and development of programmable analog devices: Abstract: This paper introduces the basic principles and development process of programmable analog devices. It lists the mainstream device series and explains their core technologies. It also looks f...; fighting FPGA/CPLD

A brief introduction to commonly used wireless technologies: [align=left][color=rgb(34, 34, 34)][font="]For users, it is not necessary for them not to understand how various wireless technologies control smart home products. Just like many people can drive, but...; btty038 RF/Wirelessly

Which time parameter is related to the maximum transmission speed that MOS can achieve?: Which time parameter is related to the maximum transmission speed that MOS can achieve? NMOS tube realizes bidirectional level conversion. If AO3400 is used, what is the maximum speed or baud rate tha...; QWE4562009 Discrete Device

Get the PA power amplifier right!: [align=left][color=rgb(0, 0, 0)][font=Arial, 微软雅黑,]As an RF engineer, your work will more or less involve power amplifiers. Power amplifiers can be said to be a hurdle that many RF engineers cannot av...; 灞波儿奔 Analogue and Mixed Signal

The inclinometer sensor "balances" the human body inclinometer and the ball-bottom balance platform: Tilt sensors are often used for horizontal measurement of systems. VTI has a production history of more than 20 years and is a pioneer in the design and production of MEMS sensors worldwide. Its advan...; sensorexpert Medical Electronics

Build common logic gate circuits using transistors: Common transistors include diodes, triodes and MOS tubes. The main logic gate circuits include AND gate, OR gate, NOT gate, NAND gate, NOR gate, XOR gate, etc. This article introduces how to build com...; fish001 Analogue and Mixed Signal

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components