MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS
TM
5Power-MOSFET,30V
BSZ0506NS
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOS
TM
5Power-MOSFET,30V
BSZ0506NS
1Description
Features
•Optimizedforhighperformancebuckconverters(Server,VGA)
•VerylowFOM
QOSS
forhighfrequencySMPS
•LowFOM
SW
forhighfrequencySMPS
•ExcellentgatechargexR
DS(on)
product(FOM)
•Verylowon-resistanceR
DS(on)
@V
GS
=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
(enlarged source interconnection)
TSDSON-8FL
S1
S2
8D
7D
6D
5D
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
OSS
Q
G
(0V..4.5V)
Value
30
4.4
40
7.2
5.2
Unit
V
mΩ
A
nC
nC
S3
G4
Type/OrderingCode
BSZ0506NS
Package
PG-TSDSON-8 FL
Marking
0506NS
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2015-04-27
OptiMOS
TM
5Power-MOSFET,30V
BSZ0506NS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.0,2015-04-27
OptiMOS
TM
5Power-MOSFET,30V
BSZ0506NS
2Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
27
2.1
-
Max.
40
40
40
35
15
160
20
20
20
-
-
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=4.5V,T
C
=25°C
V
GS
=4.5V,T
C
=100°C
V
GS
=4.5V,T
A
=25°C,R
thJA
=60K/W
1)
T
C
=25°C
T
C
=25°C
I
D
=20A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
thJA
=60K/W
IEC climatic category;
DIN IEC 68-1: 55/150/56
Continuous drain current
I
D
A
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
I
AS
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
mJ
V
W
°C
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Device on PCB,
6 cm
2
cooling area
3)
Symbol
R
thJC
R
thJA
Values
Min.
-
-
Typ.
-
-
Max.
4.6
60
Unit
K/W
K/W
Note/TestCondition
-
-
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
1)
Final Data Sheet
4
Rev.2.0,2015-04-27
OptiMOS
TM
5Power-MOSFET,30V
BSZ0506NS
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
30
1.2
-
-
-
-
-
-
49
Typ.
-
1.6
0.1
10
10
4.4
3.5
1
98
Max.
-
2
1
100
100
5.3
4.4
1.7
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=250µA
V
DS
=24V,V
GS
=0V,T
j
=25°C
V
DS
=24V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=4.5V,I
D
=20A
V
GS
=10V,I
D
=20A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=30A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
700
220
16
2.3
2.4
13
2.0
Max.
950
300
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=15V,f=1MHz
V
GS
=0V,V
DS
=15V,f=1MHz
V
GS
=0V,V
DS
=15V,f=1MHz
V
DD
=15V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=15V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=15V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=15V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
1)
2)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
Q
g(sync)
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
-
Typ.
1.9
1.1
1.4
2.2
5.2
2.7
11
4.8
7.2
Max.
-
-
-
-
7.2
-
15
-
-
Unit
nC
nC
nC
nC
nC
V
nC
nC
nC
Note/TestCondition
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to10V
V
DS
=0.1V,V
GS
=0to4.5V
V
DD
=15V,V
GS
=0V
Defined by design. Not subject to production test.
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.0,2015-04-27
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