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2N4126

Description
Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
CategoryDiscrete semiconductor    The transistor   
File Size315KB,3 Pages
ManufacturerCentral Semiconductor
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2N4126 Overview

Diodes - General Purpose, Power, Switching 100V Io/200mA BULK

2N4126 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionTO-92, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
2N4123
2N4125
2N4124 NPN
2N4126 PNP
w w w. c e n t r a l s e m i . c o m
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4123 series
devices are complementary silicon small signal
transistors manufactured by the epitaxial planar
process designed for general purpose amplifier and
switching applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL 2N4123 2N4124 2N4125 2N4126
Collector-Base Voltage
VCBO
40
30
30
25
Collector-Emitter Voltage
VCEO
30
25
30
25
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
VEBO
IC
PD
PD
TJ, Tstg
JA
JC
2N4124
MIN MAX
-
50
-
30
25
5.0
-
-
120
60
120
300
-
-
-
50
-
-
-
0.3
0.95
360
-
480
-
4.0
8.0
5.0
5.0
5.0
200
625
1.5
-65 to +150
200
83.3
2N4125
MIN MAX
-
50
-
30
30
4.0
-
-
50
25
50
200
-
-
-
50
-
-
-
0.4
0.95
150
-
200
-
4.5
10
5.0
4.0
4.0
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
2N4123
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=20V
-
50
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hfe
fT
Cob
Cib
NF
VEB=3.0V
IC=10μA
IC=1.0mA
IE=10μA
IC=50mA, IB=5.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=2.0mA
VCE=1.0V, IC=50mA
VCE=10V, IC=2.0mA, f=1.0kHz
VCE=20V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=100kHz
VEB=0.5V, IC=0, f=100kHz
VCE=5.0V, IC=100μA, RS=1.0kΩ,
f=10Hz to 15.7kHz
-
40
30
5.0
-
-
50
25
50
250
-
-
-
50
-
-
-
0.3
0.95
150
-
200
-
4.0
8.0
6.0
2N4126
MIN MAX UNITS
-
50
nA
-
25
25
4.0
-
-
120
60
120
250
-
-
-
50
-
-
-
0.4
0.95
360
-
480
-
4.5
10
4.0
MHz
pF
pF
dB
nA
V
V
V
V
V
R1 (12-January 2016)

2N4126 Related Products

2N4126 2N4123 2N4125
Description Diodes - General Purpose, Power, Switching 100V Io/200mA BULK Bipolar Transistors - BJT . . Bipolar Transistors - BJT . .
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92
package instruction TO-92, 3 PIN CYLINDRICAL, O-PBCY-T3 TO-92, 3 PIN
Contacts 3 3 3
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 25 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 50 50
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP NPN PNP
Maximum power dissipation(Abs) 0.35 W 0.35 W 0.35 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 200 MHz
Base Number Matches 1 - 1
Maker - Central Semiconductor Central Semiconductor
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