2N4123 datasheet, PDF - EEWORLD Datasheet

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2N4123: DescriptionBipolar Transistors - BJT . .; CategoryDiscrete semiconductor The transistor; File Size315KB，3 Pages; ManufacturerCentral Semiconductor

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Bipolar Transistors - BJT . .

2N4123 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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2N4123

2N4125

2N4124 NPN

2N4126 PNP

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N4123 series

devices are complementary silicon small signal

transistors manufactured by the epitaxial planar

process designed for general purpose amplifier and

switching applications.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL 2N4123 2N4124 2N4125 2N4126

Collector-Base Voltage

VCBO

40

30

25

Collector-Emitter Voltage

VCEO

30

25

30

25

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

VEBO

IC

PD

TJ, Tstg



JA



JC

2N4124

MIN MAX

-

50

-

30

25

5.0

-

120

60

120

300

-

50

-

0.3

0.95

360

-

480

-

4.0

8.0

5.0

200

625

1.5

-65 to +150

200

83.3

2N4125

MIN MAX

-

50

-

30

4.0

-

50

25

50

200

-

50

-

0.4

0.95

150

-

200

-

4.5

10

5.0

4.0

UNITS

V

mA

mW

W

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C)

2N4123

SYMBOL TEST CONDITIONS

MIN MAX

ICBO

VCB=20V

-

50

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

hfe

fT

Cob

Cib

NF

VEB=3.0V

IC=10μA

IC=1.0mA

IE=10μA

IC=50mA, IB=5.0mA

VCE=1.0V, IC=2.0mA

VCE=1.0V, IC=50mA

VCE=10V, IC=2.0mA, f=1.0kHz

VCE=20V, IC=10mA, f=100MHz

VCB=5.0V, IE=0, f=100kHz

VEB=0.5V, IC=0, f=100kHz

VCE=5.0V, IC=100μA, RS=1.0kΩ,

f=10Hz to 15.7kHz

-

40

30

5.0

-

50

25

50

250

-

50

-

0.3

0.95

150

-

200

-

4.0

8.0

6.0

2N4126

MIN MAX UNITS

-

50

nA

-

25

4.0

-

120

60

120

250

-

50

-

0.4

0.95

360

-

480

-

4.5

10

4.0

MHz

pF

dB

nA

V

R1 (12-January 2016)

2N4123 Related Products

	2N4123	2N4126	2N4125
Description	Bipolar Transistors - BJT . .	Diodes - General Purpose, Power, Switching 100V Io/200mA BULK	Bipolar Transistors - BJT . .
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Parts packaging code	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	TO-92, 3 PIN	TO-92, 3 PIN
Contacts	3	3	3
Reach Compliance Code	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	30 V	25 V	30 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	120	50
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	PNP	PNP
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	200 MHz
Maker	Central Semiconductor	-	Central Semiconductor
Base Number Matches	-	1	1

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