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SZMMBZ9V1ALT3G

Description
Switching Voltage Regulators
CategoryDiscrete semiconductor    diode   
File Size99KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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SZMMBZ9V1ALT3G Overview

Switching Voltage Regulators

SZMMBZ9V1ALT3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
Maximum breakdown voltage9.56 V
Minimum breakdown voltage8.65 V
Breakdown voltage nominal value9.1 V
Maximum clamping voltage14 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation24 W
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.225 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage6 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
MMBZxxxALT1G Series,
SZMMBZxxxALT1G Series
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
www.onsemi.com
SOT−23
CASE 318
STYLE 12
CATHODE 1
3 ANODE
CATHODE 2
SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range − 3 V to 26 V
Standard Zener Breakdown Voltage Range − 5.6 V to 47 V
Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),
per Figure 6 Waveform
ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
ESD Rating of IEC61000−4−2 Level 4,
±30
kV Contact Discharge
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0
mA
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MARKING DIAGRAM
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
©
Semiconductor Components Industries, LLC, 1996
1
October, 2016 − Rev. 19
Publication Order Number:
MMBZ5V6ALT1/D

SZMMBZ9V1ALT3G Related Products

SZMMBZ9V1ALT3G SZMMBZ6V2ALT1G
Description Switching Voltage Regulators USB Interface IC USB to Basic Serial UART IC SSOP-16
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
Maker ON Semiconductor ON Semiconductor
package instruction R-PDSO-G3 R-PDSO-G3
Contacts 3 3
Manufacturer packaging code 318-08 318-08
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 4 weeks 1 week
Maximum breakdown voltage 9.56 V 6.51 V
Minimum breakdown voltage 8.65 V 5.89 V
Breakdown voltage nominal value 9.1 V 6.2 V
Maximum clamping voltage 14 V 8.7 V
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code TO-236 TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Maximum non-repetitive peak reverse power dissipation 24 W 24 W
Number of components 2 2
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
polarity UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 0.225 W 0.225 W
Guideline AEC-Q101 AEC-Q101; IEC-61000-4-2
Maximum repetitive peak reverse voltage 6 V 3 V
surface mount YES YES
technology AVALANCHE ZENER
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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