MMBZxxxALT1G Series,
SZMMBZxxxALT1G Series
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
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SOT−23
CASE 318
STYLE 12
CATHODE 1
3 ANODE
CATHODE 2
•
SOT−23 Package Allows Either Two Separate Unidirectional
•
•
•
•
•
•
•
•
•
•
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range − 3 V to 26 V
Standard Zener Breakdown Voltage Range − 5.6 V to 47 V
Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),
per Figure 6 Waveform
ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
ESD Rating of IEC61000−4−2 Level 4,
±30
kV Contact Discharge
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0
mA
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MARKING DIAGRAM
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
©
Semiconductor Components Industries, LLC, 1996
1
October, 2016 − Rev. 19
Publication Order Number:
MMBZ5V6ALT1/D
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 1.0 ms (Note 1)
@ T
L
≤
25°C
MMBZ5V6ALT1G thru MMBZ9V1ALT1G
MMBZ12VALT1G thru MMBZ47VALT1G
Symbol
P
pk
°P
D
°
225
1.8
R
qJA
°P
D
°
300
2.4
R
qJA
T
J
, T
stg
T
L
417
− 55 to +150
260
556
mW°
mW/°C
°C/W
°mW
mW/°C
°C/W
°C
°C
Value
24
40
Unit
W
Total Power Dissipation on FR−5 Board (Note 2)
@ T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Total Power Dissipation on Alumina Substrate (Note 3)
@ T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 6 and derate above T
A
= 25°C per Figure 7.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Device
MMBZ5V6ALT1G
SZMMBZ5V6ALT1G*
MMBZ5V6ALT3G
MMBZ6VxALT1G
SZMMBZ6VxALT1G*
MMBZ6VxALT3G
MMBZ9V1ALT1G
MMBZ9V1ALT13G
MMBZxxVALT1G
SZMMBZxxVALT1G*
MMBZxxVALT3G
SZMMBZxxVALT3G*
SZMMBZxxVTALT1G*
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
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2
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Z
ZT
I
ZK
Z
ZK
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
I
PP
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
I
F
I
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V
F
= 0.9 V Max @ I
F
= 10 mA) (5% Tolerance)
24 WATTS
Breakdown Voltage
V
RWM
Volts
3.0
3.0
4.5
6.0
I
R
@
V
RWM
mA
5.0
0.5
0.5
0.3
V
BR
(Note 4)
(V)
Min
5.32
5.89
6.46
8.65
Nom
5.6
6.2
6.8
9.1
Max
5.88
6.51
7.14
9.56
@ I
T
mA
20
1.0
1.0
1.0
Max Zener
Impedance
(Note 5)
Z
ZT
@ I
ZT
W
11
−
−
−
Z
ZK
@ I
ZK
W
1600
−
−
−
mA
0.25
−
−
−
V
C
@ I
PP
(Note 6)
V
C
V
8.0
8.7
9.6
14
I
PP
A
3.0
2.76
2.5
1.7
QV
BR
mV/5C
1.26
2.80
3.4
7.5
Device*
MMBZ5V6ALT1G/T3G
MMBZ6V2ALT1G
MMBZ6V8ALT1G
MMBZ9V1ALT1G
Device
Marking
5A6
6A2
6A8
9A1
(V
F
= 0.9 V Max @ I
F
= 10 mA) (5% Tolerance)
I
R
@
V
RWM
nA
200
50
50
50
50
50
50
50
40 WATTS
Breakdown Voltage
V
BR
(Note 4)
(V)
Min
11.40
14.25
15.20
17.10
19.00
25.65
31.35
44.65
Nom
12
15
16
18
20
27
33
47
Max
12.60
15.75
16.80
18.90
21.00
28.35
34.65
49.35
@ I
T
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
C
@ I
PP
(Note 6)
V
C
V
17
21
23
25
28
40
46
54
I
PP
A
2.35
1.9
1.7
1.6
1.4
1.0
0.87
0.74
QV
BR
mV/5C
7.5
12.3
13.8
15.3
17.2
24.3
30.4
43.1
Device*
MMBZ12VALT1G
MMBZ15VALT1G
MMBZ16VALT1G
MMBZ18VALT1G
MMBZ20VALT1G
MMBZ27VALT1G/T3G
MMBZ33VALT1G
MMBZ47VALT1G
Device
Marking
12A
15A
16A
18A
20A
27A
33A
47A
V
RWM
Volts
8.5
12
13
14.5
17
22
26
38
(V
F
= 0.9 V Max @ I
F
= 10 mA) (2% Tolerance)
I
R
@
V
RWM
nA
50
50
40 WATTS
Breakdown Voltage
V
BR
(Note 4)
(V)
Min
15.68
46.06
Nom
16
47
Max
16.32
47.94
@ I
T
mA
1.0
1.0
V
C
@ I
PP
(Note 6)
V
C
V
23
54
I
PP
A
1.7
0.74
QV
BR
mV/5C
13.8
43.1
Device*
MMBZ16VTALT1G
MMBZ47VTALT1G
Device
Marking
16T
47T
V
RWM
Volts
13
38
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
5. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I
Z(AC)
= 0.1 I
Z(DC)
, with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 6 and derate per Figure 7
* Include SZ-prefix devices where applicable.
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3
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL CHARACTERISTICS
18
BREAKDOWN VOLTAGE (VOLTS)
(V
BR
@ I
T
)
15
12
9
6
3
0
−40
0.1
0.01
−40
I
R
(nA)
10
1000
100
1
0
+ 50
+ 100
TEMPERATURE (°C)
+ 150
+ 85
+ 25
TEMPERATURE (°C)
+ 125
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
320
280
C, CAPACITANCE (pF)
240
200
160
120
15 V
80
40
0
0
1
BIAS (V)
2
3
5.6 V
C, CAPACITANCE (pF)
60
50
40
30
20
10
0
0
Figure 2. Typical Leakage Current
versus Temperature
27 V
33 V
1
BIAS (V)
2
3
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
300
P
D
, POWER DISSIPATION (mW)
250
Figure 4. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
ALUMINA SUBSTRATE
200
150
100
FR−5 BOARD
50
0
0
25
50
75
100
125
TEMPERATURE (°C)
150
175
Figure 5. Steady State Power Derating Curve
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4
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL CHARACTERISTICS
t
r
≤
10
ms
100
VALUE (%)
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF I
PP
.
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ T
A
= 25°C
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150 175
T
A
, AMBIENT TEMPERATURE (°C)
200
PEAK VALUE − I
PP
HALF VALUE −
50
t
P
0
I
PP
2
0
1
2
3
t, TIME (ms)
4
Figure 6. Pulse Waveform
Figure 7. Pulse Derating Curve
100
P
pk
, PEAK SURGE POWER (W)
RECTANGULAR
WAVEFORM, T
A
= 25°C
BIDIRECTIONAL
100
P
pk
, PEAK SURGE POWER (W)
RECTANGULAR
WAVEFORM, T
A
= 25°C
BIDIRECTIONAL
10
UNIDIRECTIONAL
10
UNIDIRECTIONAL
1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
PW, PULSE WIDTH (ms)
PW, PULSE WIDTH (ms)
Figure 8. Maximum Non−repetitive Surge
Power, P
pk
versus PW
Power is defined as V
RSM
x I
Z
(pk) where V
RSM
is
the clamping voltage at I
Z
(pk).
Figure 9. Maximum Non−repetitive Surge
Power, P
pk
(NOM) versus PW
Power is defined as V
Z
(NOM) x I
Z
(pk) where
V
Z
(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
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5
Microchip MCU
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